PD-97291B
IRHLYS77034CM
2N7607T3
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
Product Summary
Part Number
IRHLYS77034CM
IRHLYS73034CM
Radiation Level
100 kRads(Si)
300 kRads(Si)
RDS(on)
0.045
0.045
I
D
20A*
20A*
Low-Ohmic
60V, N-CHANNEL
R7
TECHNOLOGY
Description
IR HiRel R7 Logic Level Power MOSFETs provide
simple solution to interfacing CMOS and TTL
control circuits to power devices in space and
other radiation environments. The threshold
voltage remains within acceptable operating limits
over the full operating temperature and post
radiation. This is achieved while maintaining single
event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
Features
5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Hermetically Sealed
Light Weight
Complimentary P-Channel Available -
IRHLYS797034CM
ESD Rating: Class 1B per MIL-STD-750, Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= 4.5V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Pre-Irradiation
Parameter
Value
20*
20*
80
75
0.6
± 10
98
20
7.5
6.9
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
W
W/°C
V
mJ
A
mJ
V/ns
°C
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
I
D2
@ V
GS
= 4.5V, T
C
= 100°C Continuous Drain Current
*Current is limited by package
For footnotes refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2018-12-19
IRHLYS77034CM
2N7607T3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
V
GS(th)
/T
J
Gfs
I
DSS
I
GSS
Q
G
Q
GS
Q
GD
t
d(on)
Tr
t
d(off)
Tf
Ls +L
D
C
iss
C
oss
C
rss
R
G
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Min. Typ. Max. Units
60
–––
–––
1.0
–––
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– –––
0.07 –––
––– 0.045
–––
-5.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.8
2025
484
5.1
1.16
2.0
–––
–––
1.0
10
100
-100
34
8.0
16
26
110
60
28
–––
–––
–––
–––
–––
V
V/°C
Test Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D2
= 20A
V
V
DS
= V
GS
, I
D
= 250µA
mV/°C
S
V
DS
= 15V, I
D2
= 20A
V
DS
= 48V, V
GS
= 0V
µA
V
DS
= 48V,V
GS
= 0V,T
J
=125°C
V
GS
= 10V
nA
V
GS
= -10V
I
D1
= 20A
nC
V
DS
= 30V
V
GS
= 4.5V
V
DD
= 30V
I
D1
= 20A
ns
R
G
= 7.5
V
GS
= 5.0V
nH
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm / 0.25
in from package) with Source wire internally
bonded from Source pin to Drain pad
V
GS
= 0V
pF
V
DS
= 25V
ƒ = 1.0MHz
ƒ = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20*
80
1.2
160
705
A
V
ns
nC
Test Conditions
T
J
= 25°C,I
S
= 20A, V
GS
= 0V
T
J
= 25°C ,I
F
= 20A, V
DD
25V
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
* Current is limited by package
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (Typical Socket Mount)
Min.
–––
–––
Typ.
–––
–––
Max.
1.67
80
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
DD
= 25V, starting T
J
= 25°C, L =0.49mH, Peak I
L
= 20A, V
GS
= 10V
V
I
SD
20A, di/dt
347A/µs, V
DD
60V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. 10 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. 48volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2018-12-19
IRHLYS77034CM
2N7607T3
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total
ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and
specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source On-State
Resistance (TO-3)
Static Drain-to-Source On--State
Resistance (Low Ohmic TO-257AA)
Diode Forward Voltage
Up to 300 kRads(Si)
1
Min.
Max.
60
–––
1.0
2.0
–––
100
–––
-100
–––
1.0
–––
–––
–––
0.045
0.045
1.2
Units
V
V
nA
nA
µA
V
Test Conditions
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V
V
GS
= -10V
V
DS
= 48V, V
GS
= 0V
V
GS
= 4.5V, I
D2
= 20A
V
GS
= 4.5V, I
D2
= 20A
V
GS
= 0V, I
S
= 20A
1. Part numbers IRHLYS77034 and IRHLYS73034
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm
2
))
38 ± 5%
62 ± 5%
85 ± 5%
Energy
(MeV)
300 ± 7.5%
355 ± 7.5%
380 ± 7.5%
Range
(µm)
38 ± 7.5%
33 ± 7.5%
29 ± 7.5%
VDS (V)
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
0V
-2V
-4V
-5V
-6V
-7V
60
60
60
60
60
60
60
60
60
60
60
–––
60
–––
–––
–––
–––
–––
Fig a.
Typical Single Event Effect, Safe Operating Area
For footnotes refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2018-12-19
IRHLYS77034CM
2N7607T3
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs.
Temperature
Fig 5.
Typical On-Resistance Vs Gate Voltage
4
Fig 6.
Typical On-Resistance Vs Drain Current
2018-12-19
International Rectifier HiRel Products, Inc.
IRHLYS77034CM
2N7607T3
Pre-Irradiation
Fig 7.
Typical Drain-to-Source
Breakdown Voltage Vs Temperature
Fig 8.
Typical Threshold Voltage Vs
Temperature
Fig 9.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 11.
Typical Source-Drain Diode Forward Voltage
5
Fig 12.
Maximum Drain Current Vs.Case Temperature
2018-12-19
International Rectifier HiRel Products, Inc.
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