BAP51-06W
General purpose PIN diode
Rev. 01 — 26 May 2008
Product data sheet
1. Product profile
1.1 General description
Two planar PIN diodes in common anode configuration in a SOT323 small SMD plastic
package.
1.2 Features
I
Two elements in common anode configuration in a small SMD plastic package
I
Low diode capacitance
I
Low diode forward resistance
1.3 Applications
I
general RF application
2. Pinning information
Table 1.
Pin
1
2
3
Discrete pinning
Description
cathode 1
cathode 2
common connection
1
2
3
2
3
1
mgu320
Simplified outline
Graphic symbol
3. Ordering information
Table 2.
Ordering information
Name
BAP51-06W
-
Description
plastic surface-mounted package; 3 leads
Version
SOT323
Type number Package
NXP Semiconductors
BAP51-06W
General purpose PIN diode
4. Marking
Table 3.
Marking
Marking
W7*
Description
* = p: made in Hong Kong
* = t : made in Malaysia
Type number
BAP51-06W
5. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
R
I
F
P
tot
T
stg
T
j
reverse voltage
forward current
total power dissipation
storage temperature
junction temperature
T
sp
= 90
°C
-
-
-
−65
−65
50
50
240
+150
+150
V
mA
mW
°C
°C
Parameter
Conditions
Min
Max
Unit
6. Thermal characteristics
Table 5.
Symbol
R
th(j-sp)
Thermal characteristics
Parameter
thermal resistance from junction
to solder point
Conditions
Typ
250
Unit
K/W
7. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
F
I
R
C
d
Parameter
forward voltage
reverse current
diode capacitance
Conditions
I
F
= 50 mA
V
R
= 50 V
see
Figure 1;
f = 1 MHz
V
R
= 0 V
V
R
= 1 V
V
R
= 5 V
r
D
diode forward resistance
see
Figure 2;
f = 100 MHz
I
F
= 0.5 mA
I
F
= 1 mA
I
F
= 10 mA
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
Typ
0.95
-
0.4
0.3
0.2
5.3
3.5
1.5
Max
1.1
100
-
0.55
0.35
9
6.5
2.5
Unit
V
nA
pF
pF
pF
Ω
Ω
Ω
BAP51-06W_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 26 May 2008
2 of 8
NXP Semiconductors
BAP51-06W
General purpose PIN diode
Table 6.
Characteristics
…continued
T
j
= 25
°
C unless otherwise specified.
Symbol
ISL
Parameter
isolation
Conditions
V
R
= 0 V
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
L
ins
insertion loss
I
F
= 0.5 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
I
F
= 1 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
I
F
= 10 mA
f = 900 MHz
f = 1800 MHz
f = 2450 MHz
τ
L
L
S
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
17
13
12
0.44
0.50
0.54
0.33
0.39
0.43
0.19
0.24
0.28
0.55
1.6
Max
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
nH
charge carrier life time
series inductance
when switched from I
F
= 10 mA to I
R
= 6 mA;
R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
Guaranteed on AQL basis: inspection level S4, AQL 1.0.
500
C
d
(fF)
400
mld508
10
2
r
D
(Ω)
mld507
10
300
200
1
100
0
0
4
8
12
16
V
R
(V)
20
10
−1
10
−1
1
10
I
F
(mA)
10
2
f = 100 MHz; T
j
= 25
°C.
f = 100 MHz; T
j
= 25
°C.
Fig 1.
Diode capacitance as a function of reverse
voltage; typical values
Fig 2.
Diode forward resistance as a function of
forward current; typical values
BAP51-06W_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 26 May 2008
3 of 8
NXP Semiconductors
BAP51-06W
General purpose PIN diode
0
L
ins
(dB)
−0.5
(1) (2) (3)
001aai135
0
ISL
(dB)
−10
001aai136
−1
−20
−1.5
−30
−2
−40
−2.5
0.5
1
1.5
2
2.5
3
f (GHz)
−50
0.5
1
1.5
2
2.5
3
f (GHz)
(1) I
F
= 10 mA
(2) I
F
= 1 mA
(3) I
F
= 0.5 mA
Diode inserted in series with a 50
Ω
stripline circuit and
biased via the analyzer Tee network.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit; T
amb
= 25
°C.
Fig 3.
Insertion loss of the diode as a function of
frequency; typical values
Fig 4.
Isolation of the diode as a function of
frequency; typical values
BAP51-06W_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 26 May 2008
4 of 8
NXP Semiconductors
BAP51-06W
General purpose PIN diode
8. Package outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
y
HE
v
M
A
3
Q
A
A1
c
1
e1
e
bp
2
w
M
B
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.8
A1
max
0.1
bp
0.4
0.3
c
0.25
0.10
D
2.2
1.8
E
1.35
1.15
e
1.3
e1
0.65
HE
2.2
2.0
Lp
0.45
0.15
Q
0.23
0.13
v
0.2
w
0.2
OUTLINE
VERSION
SOT323
REFERENCES
IEC
JEDEC
JEITA
SC-70
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
Fig 5.
BAP51-06W_1
Package outline SOT323
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 26 May 2008
5 of 8
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