Transistors
2SB0774
(2SB774)
Silicon PNP epitaxial planar type
For low-frequency amplification
5.0
±0.2
Unit: mm
4.0
±0.2
0.7
±0.1
0.7
±0.2
12.9
±0.5
•
High emitter-base voltage (Collector open) V
EBO
•
Protective diodes and resistances between emitter and base can be
omitted.
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−30
−25
−15
−100
−200
400
150
−55
to
+150
Unit
V
V
2.3
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
1
2 3
5.1
±0.2
0.45
+0.15
–0.1
2.5
+0.6
–0.2
■
Features
V
mA
mA
mW
°C
°C
1: Emitter
2: Collector
3: Base
EIAJ: SC-43A
TO-92-B1 Package
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common-emitter reverse transfer)
V
CE(sat)
f
T
C
ob
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CB
= −10
V, I
E
=
0
V
CE
= −20
V, I
B
=
0
V
CE
= −10
V, I
C
= −2
mA
V
CE
= −2
V, I
C
= −100
mA
I
C
= −100
mA, I
B
= −10
mA
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
150
4
210
90
−
0.5
Min
−30
−25
−15
−1
−100
460
Typ
Max
Unit
V
V
V
µA
µA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
R
210 to 340
S
290 to 460
Note) The part number in the parenthesis shows conventional part number.
Publication date: March 2003
SJC00053BED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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