IRF240
MECHANICAL DATA
Dimensions in mm (inches)
40.01 (1.575)
Max.
26.67
(1.050)
Max.
4.47 (0.176)
Rad.
2 Pls.
N–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
V
DSS
I
D(cont)
R
DS(on)
200V
18A
Ω
0.18Ω
22.23 (0.875)
Max.
11.43 (0.450)
6.35 (0.250)
1.09 (0.043)
0.97 (0.038)
Dia.
30.40 (1.197)
29.90 (1.177)
12.19 (0.48)
11.18 (0.44)
1.63 (0.064)
1.52 (0.060)
2
11.18 (0.440)
10.67 (0.420)
4.09 (0.161)
3.84 (0.151)
2 Pls
1
FEATURES
• HERMETICALLY SEALED TO3 METAL
PACKAGE
16.97 (0.668)
16.87 (0.664)
• SIMPLE DRIVE REQUIREMENTS
• SCREENING OPTIONS AVAILABLE
TO3 METAL PACKAGE (TO204AA)
Underside View
Pin 1 = Gate
Pin 2 = Source
Case = Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
GS
I
D
I
D
I
DM
P
D
T
J
, T
stg
R
θJC
R
θJA
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
±20V
18A
11A
72A
125W
1.0W/°C
–55 to 150°C
1.0°C/W max.
30°C/W max.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3332
Issue 1
IRF240
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise stated)
Parameter
BV
DSS
∆T
J
R
DS(on)
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Breakdown Voltage
Static Drain – Source On–State
Resistance
Forward Transconductance
Zero Gate Voltage Drain Current
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
V
DD
= 100V
I
D
= 18A
R
G
= 9.1Ω
Test Conditions
V
GS
= 0
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
DS
= 0.5BV
DSS
I
D
= 18A
I
D
= 11A*
I
D
= 18A*
I
D
= 250µA
I
DS
= 11A*
V
DS
= 0.8BV
DSS
T
J
= 125°C
I
D
= 1mA
Min.
200
Typ.
Max.
Unit
V
∆BV
DSS
Temperature Coefficient of
Reference to 25°C
0.29
0.18
0.21
2
6.1
25
250
100
-100
1300
400
130
32
2.2
14
60
10.6
38
20
152
58
67
18
72
4
V / °C
Ω
V
S(Ω
µA
nA
)
Ω
(
V
GS(th)
Gate Threshold Voltage
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
L
D
L
S
pF
nC
ns
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
PACKAGE CHARACTERISTICS
Internal Drain Inductance
Internal Source Inductance
I
S
= 18A
V
GS
= 0
I
S
= 18A
T
J
= 25°C
d
i
/ d
t
≤
100A/µs V
DD
≤
50V
(from 6mm down drain lead pad to centre of die)
A
V
ns
µC
T
J
= 25°C
1.5
500
5.3
5.0
13
nH
(from 6mm down source lead to centre of source bond pad)
* Pulse width
≤
300µs; Duty Cycle
≤
2%
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Document Number 3332
Issue 1
Industrial Control Electronics
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