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BAW56W

Description
0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE
CategoryDiscrete semiconductor    diode   
File Size91KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BAW56W Overview

0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAW56W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.25 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
Maximum reverse current1 µA
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
Base Number Matches1
BAV756S; BAW56 series
High-speed switching diodes
Rev. 05 — 26 November 2007
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
NXP
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
SC-88
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
Package
configuration
very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
Type number
TO-236AB small
-
-
-
-
leadless ultra
small
very small
ultra small
very small
1.2 Features
I
High switching speed: t
rr
4 ns
I
Low leakage current
I
Small SMD plastic packages
I
Low capacitance: C
d
2 pF
I
Reverse voltage: V
R
90 V
1.3 Applications
I
High-speed switching
I
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
90
4
Unit
µA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.

BAW56W Related Products

BAW56W BAV756S BAW56 BAW56M BAW56T BAW56S
Description 0.15 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236 0.25 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236 0.075 A, 2 ELEMENT, SILICON, SIGNAL DIODE 0.2 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
Is it Rohs certified? conform to conform to incompatible conform to conform to conform to
Maker NXP NXP NXP NXP NXP NXP
Reach Compliance Code compliant compliant unknow compli compli compli
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.25 V 1.3 V 1.3 V 0.001 V 1.25 V 1.3 V
JESD-609 code e3 e3 e0 e3 e3 e3
Maximum operating temperature 150 °C 125 °C 150 °C 150 °C 125 °C 125 °C
Maximum output current 0.15 A 0.25 A 0.215 A 0.15 A 0.15 A 0.25 A
Maximum repetitive peak reverse voltage 90 V 90 V 85 V 90 V 90 V 90 V
Maximum reverse recovery time 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs 0.004 µs
surface mount YES YES YES YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin/Lead (Sn/Pb) Tin (Sn) Tin (Sn) Tin (Sn)
Is it lead-free? Lead free Lead free - Lead free Lead free Lead free
Parts packaging code SC-70 SC-88 - SC-101 SC-75 SC-88
package instruction R-PDSO-G3 R-PDSO-G6 - 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN PLASTIC, SMD, SC-75, 3 PIN PLASTIC, SMD, SC-88, 6 PIN
Contacts 3 6 - 3 3 6
ECCN code EAR99 EAR99 - EAR99 - EAR99
Configuration COMMON ANODE, 2 ELEMENTS COMPLEX - COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS 2 BANKS, COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON - SILICON SILICON SILICON
JESD-30 code R-PDSO-G3 R-PDSO-G6 - R-PBCC-N3 R-PDSO-G3 R-PDSO-G6
Humidity sensitivity level 1 1 - 1 1 1
Maximum non-repetitive peak forward current 4 A - 4 A 4 A 4 A -
Number of components 2 4 - 2 2 4
Number of terminals 3 6 - 3 3 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 - 260 260 260
Maximum power dissipation 0.2 W 0.35 W - 0.25 W 0.17 W 0.35 W
Certification status Not Qualified Not Qualified - Not Qualified Not Qualified Not Qualified
Terminal form GULL WING GULL WING - NO LEAD GULL WING GULL WING
Terminal location DUAL DUAL - DUAL DUAL DUAL
Maximum time at peak reflow temperature 30 30 - 30 30 30

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