1.5SMC56CA datasheet, PDF - EEWORLD Datasheet

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1.5SMC56CA: Description1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB; CategoryDiscrete semiconductor diode; File Size991KB，6 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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1.5SMC56CA Overview

1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

1.5SMC56CA Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Littelfuse
Parts packaging code	DO-214AB
package instruction	R-PDSO-J2
Contacts	2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Other features	EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Maximum breakdown voltage	58.8 V
Minimum breakdown voltage	53.2 V
Breakdown voltage nominal value	56 V
Maximum clamping voltage	77 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-J2
JESD-609 code	e3
Humidity sensitivity level	1
Maximum non-repetitive peak reverse power dissipation	1500 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
polarity	BIDIRECTIONAL
Maximum power dissipation	6.5 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	47.8 V
surface mount	YES
technology	AVALANCHE
Terminal surface	Matte Tin (Sn)
Terminal form	J BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Base Number Matches	1

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Transient Voltage Suppression Diodes

Surface Mount – 1500W > 1.5SMC series

1.5SMC Series

Uni-directional

Bi-directional

Descriptios

RoHS

The 1.5SMC series is designed specifically to protect

sensitive electronic equipment from voltage transients

induced by lightning and other transient voltage events.

Features

• 1500W peak pulse power

capability at 10/1000μs

waveform, repetition rate

(duty cycles):0.01%

• Excellent clamping

capability

• Low incremental surge

resistance

• Typical I

less than 1μA

when V

min>12V

• For surface mounted

applications to optimize

board space

• Low profile package

• Built-in strain relief

• Typical failure mode is

short from over-specified

voltage or current

• Whisker test is conducted

based on JEDEC

JESD201A per its table 4a

and 4c

• IEC-61000-4-2 ESD

30kV(Air), 30kV (Contact)

• ESD protection of data

lines in accordance with

IEC 61000-4-2

• EFT protection of data

lines in accordance with

IEC 61000-4-4

Applications

TVS devices are ideal for the protection of I/O Interfaces,

bus and other vulnerable circuits used in Telecom,

Computer, Industrial and Consumer electronic

applications.

Additional Infomarion

• Fast response time:

typically less than 1.0ps

from 0V to BV min

• Glass passivated chip

junction

• High temperature

to reflow soldering

guaranteed: 260°C/40sec

• V

@ T

= V

@25°C

x (1+

T x (T

- 25))

(

T:Temperature

Coefficient, typical value

is 0.1%)

• Plastic package is

flammability rated V-0 per

Underwriters Laboratories

• Meet MSL level1, per

J-STD-020, LF maximun

peak of 260

• Matte tin lead–free plated

• Halogen free and RoHS

compliant

• Pb-free E3 means 2nd

level interconnect is

Pb-free and the terminal

finish material is tin(Sn)

(IPC/JEDEC J-STD-

609A.01)

Agency Approvals

AGENCY

AGENCY FILE NUMBER

E230531

Maximum Ratings and Thermal Characteristics

=25

C unless otherwise noted)

Parameter

Peak Pulse Power Dissipation at

=25ºC by 10/1000µs Waveform

(Fig.2)(Note 1), (Note 2), (Note 5)

Power Dissipation on Infinite Heat

Sink at T

=50

Peak Forward Surge Current, 8.3ms

Single Half Sine Wave (Note 3)

Maximum Instantaneous Forward

Voltage at 100A for Unidirectional

Only (Note 4)

Operating Temperature Range

Storage Temperature Range

Typical Thermal Resistance Junction

to Lead

Typical Thermal Resistance Junction

to Ambient

Symbol

PPM

FSM

STG

θJL

θJA

Value

1500

6.5

200

3.5/5.0

-65 to 150

-65 to 175

Unit

°C

°C/W

Notes:

1. Non-repetitive current pulse , per Fig. 4 and derated above T

(initial) =25

C per Fig. 3.

2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.

3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional

device only, duty cycle=4 per minute maximum.

4. V

< 3.5V for single die parts and V

< 5.0V for stacked-die parts.

5. The P

PPM

of stacked-die parts is 2000W and please contact littelfuse for the detail

stacked-die parts.

Functional Diagram

Bi-directional

Cathode

Uni-directional

Anode

Datasheet

Resources

Samples

Specifications are subject to change without notice.

Revised: 11/20/15

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