This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SB0952
(2SB952)
, 2SB0952A
(2SB952A)
Silicon PNP epitaxial planar type
For low-voltage switching
Unit: mm
■
Features
•
Low collector-emitter saturation voltage V
CE(sat)
•
High-speed switching
•
N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
10.0
±0.3
1.5
±0.1
8.5
±0.2
6.0
±0.2
3.4
±0.3
1.0
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
1.5
+0
–0.4
4.4
±0.5
2.0
±0.5
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Symbol
V
CBO
V
CEO
Collector-base voltage
(Emitter open)
2SB0952
Collector-emitter voltage 2SB0952
(Base open)
2SB0952A
Emitter-base voltage (Collector open)
Collector current
Peak collector current
−20
−40
−5
−7
30
V
(6.5)
V
EBO
I
C
I
CP
P
C
T
j
V
A
−12
1.3
A
Collector power dissipation
Junction temperature
Storage temperature
W
1: Base
2: Collector
3: Emitter
N-G1 Package
T
a
=
25°C
Note) Self-supported type package is also prepared.
150
°C
°C
T
stg
−55
to
+150
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
2SB0952
2SB0952
Conditions
Min
−20
−40
Typ
Max
(7.6)
2SB0952A
2SB0952A
2SB0952A
/D
Emitter-base cutoff current (Collector open)
ce
Forward current transfer ratio
h
FE2 *
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
2. *: Rank classification
Rank
h
FE2
R
60 to 120
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Q
90 to 180
P
130 to 260
d
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Rating
−40
−50
Unit
V
Unit
V
I
C
= −10
mA, I
B
=
0
V
CB
= −40
V, I
E
=
0
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
−50
−50
µA
µA
V
−50
260
V
CE
= −2
V, I
C
= −
0.1 A
V
CE
= −2
V, I
C
= −2
A
I
C
= −5
A, I
B
= −
0.16 A
I
C
= −5
A, I
B
= −
0.16 A
45
60
−
0.6
−1.5
V
V
CE
= −10
V, I
C
= −
0.5 A, f
=
10 MHz
V
CB
= −10
V, I
E
= 0,
f
=
1 MHz
I
C
= −2
A
I
B1
= −66
mA, I
B2
=
66 mA
V
CC
= −20
V
150
MHz
140
0.1
0.5
0.1
MHz
µs
µs
µs
(1.5)
1
2
3
(8.5)
(6.0)
1.3
2.54
±0.3
1.4
±0.1
5.08
±0.5
0.8
±0.1
R = 0.5
R = 0.5
1.0
±0.1
0.4
±0.1
Ma
int
en
an
isc
on
tin
ue
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2003
SJD00031AED
4.4
±0.5
0 to 0.4
14.4
±0.5
3.0
+0.4
–0.2
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SB0952, 2SB0952A
P
C
T
a
40
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−6
I
B
=–60mA
V
CE(sat)
I
C
−10
T
C
=25˚C
I
C
/I
B
=30
T
C
=100˚C
25˚C
Collector power dissipation P
C
(W)
Collector current I
C
(A)
30
(1)
(1)T
C
=Ta
(2)With a 50×50×2mm
Al heat sink
(3)Without heat sink
(P
C
=1.3W)
−5
–50mA
–45mA
–40mA
–35mA
–30mA
−4
−1
–25˚C
20
−3
–25mA
–20mA
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
BE(sat)
I
C
−10
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=30
−1
T
C
=–25˚C
100˚C
25˚C
−
0.1
ue
−
0.01
−
0.1
−1
−10
/D
C
ob
V
CB
isc
on
tin
Collector current I
C
(A)
ce
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
µs
)
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
10
4
Ma
int
en
I
E
=0
f=1MHz
T
C
=25˚C
Collector current I
C
(A)
10
3
10
2
10
1
−
0.1
−1
−10
−100
−
0.01
0
−2
−4
−6
−8
−
0.01
−
0.1
−1
−10
2SB0952A
2SB0952
Collector-base voltage V
CB
(V)
2
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0
0
−1
−2
−3
−4
−5
−6
−
0.01
−
0.1
−1
−10
M
ain
Di
sc te
on na
tin nc
ue e/
d
−2
–15mA
−
0.1
10
–10mA
(2)
−1
(3)
–5mA
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
I
C
f
T
I
C
10
4
V
CE
=–2V
10
4
V
CE
=–10V
f=10MHz
T
C
=25˚C
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
10
3
10
3
T
C
=100˚C
25˚C
10
2
–25˚C
10
2
10
10
1
−
0.1
−1
−10
−100
1
−
0.01
−
0.1
−1
−10
Collector current I
C
(A)
Collector current I
C
(A)
t
on
, t
stg
, t
f
I
C
Safe operation area
−10
−100
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=30
(–I
B1
=I
B2
)
V
CC
=–20V
T
C
=25˚C
an
Non repetitive pulse
T
C
=25˚C
−10
I
CP
I
C
−1
t=10ms
t=1ms
t
stg
−1
t=300ms
t
on
t
f
−
0.1
−
0.1
−100
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
SJD00031AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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co L a d t ty
du
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ct
life
an ut e
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as lat
cy
on es
cle
ic. t in
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co fo
ge
.jp rm
.
/en at
/ ion
.
Ma
int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
Test/Measurement
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