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BC640

Description
PNP medium power transistors
CategoryDiscrete semiconductor    The transistor   
File Size121KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC640 Overview

PNP medium power transistors

BC640 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.8 W
surface mountNO
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Package
NXP
BC640
[2]
BCP53
BCX53
[1]
[2]
Type number
[1]
NPN complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC639
BCP56
BCX56
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
−80
−1
−1.5
250
160
250
Unit
V
A
A

BC640 Related Products

BC640 BCP53 BCX53
Description PNP medium power transistors 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR PNP medium power transistors
Is it Rohs certified? incompatible conform to conform to
package instruction , SMALL OUTLINE, R-PDSO-G4 PLASTIC, SC-62, 3 PIN
Reach Compliance Code unknow compli compli
Maximum collector current (IC) 1 A 1 A 1 A
Configuration Single SINGLE SINGLE
Minimum DC current gain (hFE) 40 25 40
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
surface mount NO YES YES
Maker NXP - NXP
Maximum power dissipation(Abs) 0.8 W - 1.5 W
Is it lead-free? - Lead free Lead free
Shell connection - COLLECTOR COLLECTOR
Collector-emitter maximum voltage - 80 V 80 V
JESD-30 code - R-PDSO-G4 R-PSSO-F3
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Number of components - 1 1
Number of terminals - 4 3
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) - 260 260
Certification status - Not Qualified Not Qualified
Terminal surface - Tin (Sn) Tin (Sn)
Terminal form - GULL WING FLAT
Terminal location - DUAL SINGLE
Maximum time at peak reflow temperature - 30 30
transistor applications - AMPLIFIER AMPLIFIER
Transistor component materials - SILICON SILICON
Nominal transition frequency (fT) - 115 MHz 50 MHz
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