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BCX53

Description
PNP medium power transistors
CategoryDiscrete semiconductor    The transistor   
File Size121KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BCX53 Overview

PNP medium power transistors

BCX53 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-89
package instructionPLASTIC, SC-62, 3 PIN
Contacts3
Reach Compliance Codecompli
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-243
JESD-30 codeR-PSSO-F3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formFLAT
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
BC640; BCP53; BCX53
80 V, 1 A PNP medium power transistors
Rev. 08 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
PNP medium power transistor series.
Table 1.
Product overview
Package
NXP
BC640
[2]
BCP53
BCX53
[1]
[2]
Type number
[1]
NPN complement
JEITA
SC-43A
SC-73
SC-62
JEDEC
TO-92
-
TO-243
BC639
BCP56
BCX56
SOT54
SOT223
SOT89
Valid for all available selection groups.
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
I
High current
I
Two current gain selections
I
High power dissipation capability
1.3 Applications
I
I
I
I
Linear voltage regulators
High-side switches
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
single pulse; t
p
1 ms
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
V
CE
=
−2
V;
I
C
=
−150
mA
Conditions
open base
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
−80
−1
−1.5
250
160
250
Unit
V
A
A

BCX53 Related Products

BCX53 BC640 BCP53
Description PNP medium power transistors PNP medium power transistors 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Is it Rohs certified? conform to incompatible conform to
package instruction PLASTIC, SC-62, 3 PIN , SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code compli unknow compli
Maximum collector current (IC) 1 A 1 A 1 A
Configuration SINGLE Single SINGLE
Minimum DC current gain (hFE) 40 40 25
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type PNP PNP PNP
surface mount YES NO YES
Is it lead-free? Lead free - Lead free
Maker NXP NXP -
Shell connection COLLECTOR - COLLECTOR
Collector-emitter maximum voltage 80 V - 80 V
JESD-30 code R-PSSO-F3 - R-PDSO-G4
JESD-609 code e3 - e3
Humidity sensitivity level 1 - 1
Number of components 1 - 1
Number of terminals 3 - 4
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 - 260
Maximum power dissipation(Abs) 1.5 W 0.8 W -
Certification status Not Qualified - Not Qualified
Terminal surface Tin (Sn) - Tin (Sn)
Terminal form FLAT - GULL WING
Terminal location SINGLE - DUAL
Maximum time at peak reflow temperature 30 - 30
transistor applications AMPLIFIER - AMPLIFIER
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 50 MHz - 115 MHz
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