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BC848

Description
100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size106KB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BC848 Overview

100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR

BC848 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknow
ECCN codeEAR99
Is SamacsysN
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.6 V
Base Number Matches1
BC848 series
30 V, 100 mA NPN general-purpose transistors
Rev. 07 — 17 November 2009
Product data sheet
1. Product profile
1.1 General description
NPN general-purpose transistors in Surface Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BC848B
BC848W
SOT23
SOT323
JEITA
-
SC-70
JEDEC
TO-236AB
-
PNP
complement
BC858B
BC858W
Type number
1.2 Features
General-purpose transistors
SMD plastic packages
1.3 Applications
General-purpose switching and amplification
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
BC848B
BC848W
V
CE
= 5 V;
I
C
= 2 mA
200
110
290
-
450
800
Conditions
open base
Min
-
-
Typ
-
-
Max
30
100
Unit
V
mA

BC848 Related Products

BC848 BC848W BC848B
Description 100 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow compli compli
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 110 110 200
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V
Maker NXP NXP -
Base Number Matches 1 - 1
Is it lead-free? - Lead free Lead free
Is it Rohs certified? - conform to conform to
Parts packaging code - SC-70 SOT-23
Contacts - 3 3
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Peak Reflow Temperature (Celsius) - 260 260
Maximum power dissipation(Abs) - 0.2 W 0.25 W
Terminal surface - Tin (Sn) Tin (Sn)
Maximum time at peak reflow temperature - 30 30
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