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2SK1163-E

Description
11A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size981KB,9 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
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2SK1163-E Overview

11A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN

2SK1163-E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage450 V
Maximum drain current (Abs) (ID)11 A
Maximum drain current (ID)11 A
Maximum drain-source on-resistance0.7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Maximum pulsed drain current (IDM)40 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website:
http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to
http://www.renesas.com/inquiry.

2SK1163-E Related Products

2SK1163-E 2SK1164-E
Description 11A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN 11A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, SC-65, TO-3P, 3 PIN
Is it Rohs certified? conform to conform to
Parts packaging code TO-3P TO-3P
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3
Reach Compliance Code unknow unknow
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 450 V 500 V
Maximum drain current (Abs) (ID) 11 A 11 A
Maximum drain current (ID) 11 A 11 A
Maximum drain-source on-resistance 0.7 Ω 0.8 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 100 W 100 W
Maximum pulsed drain current (IDM) 40 A 40 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Base Number Matches 1 1

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