2SB955(K)
Silicon PNP Triple Diffused
ADE-208-863 (Z)
1st. Edition
Sep. 2000
Application
Power switching complementary pair with 2SD1126(K)
Outline
TO-220AB
2
1
1. Base
2. Collector
(Flange)
3. Emitter
I
D
1.0 kΩ
(Typ)
200
Ω
(Typ)
3
1
2 3
2SB955(K)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
C to E diode forward current
Collector power dissipation
Junction temperature
Storage temperature
Notes: 1. Value at T
C
= 25°C
2. PW
≤
1 ms 1 shot
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
I
D
*
1
P
C
*
2
Tj
Tstg
Rating
–120
–120
–7
–10
–15
10
50
150
–55 to +150
Unit
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
–120
–7
—
—
1000
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
4.0
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
3.0
—
—
V
V
V
V
V
µs
µs
Unit
V
V
µA
µA
Test conditions
I
C
= –25 mA, R
BE
=
∞
I
E
= –200 mA, I
C
= 0
V
CB
= –120 V, I
E
= 0
V
CE
= –100 V, R
BE
=
∞
V
CE
= –3 V, I
C
= –5 A*
1
I
C
= –5 A, I
B
= –10 mA*
1
I
C
= –10 A, I
B
= –0.1 A*
1
I
C
= –5 A, I
B
= –10 mA*
1
I
C
= –10 A, I
B
= –0.1 A*
1
I
D
= 10 A*
1
V
CC
= –30 V
I
C
= –5 A, I
B1
= –I
B2
= –10 mA
Collector to emitter breakdown V
(BR)CEO
voltage
Emitter to base breakdown
voltage
Collector cutoff current
V
(BR)EBO
I
CBO
I
CEO
DC current transfer ratio
Collector to emitter saturation
voltage
Base to emitter saturation
voltage
C to E diode forward voltage
Turn on time
Turn off time
Note:
1. Pulse test
h
FE
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
V
D
t
on
t
off
2
2SB955(K)
Maximum Collector Dissipation
Curve
50
Collector power dissipation P
C
(W)
Area of Safe Operation
–30
–10
Collector current I
C
(A)
I
C(max)
–3
–1.0
–0.3
Ta = 25°C
–0.1
–0.03
–3
i
C(peak)
ot
)
sh
°
C
ot
25
s1
=
sh
m
1
s1
=
(T
C
m
ion
PW
10
at
er
Op
40
PW
=
30
DC
20
10
0
50
100
Case temperature T
C
(°C)
150
–10
–30
–100
–300
Collector to emitter voltage V
CE
(V)
Typical Output Characteristics
2.0
DC Current Transfer Ratio vs.
Collector Current
30000
DC current transfer ratio h
FE
V
CE
= –3 V
Pulse
–10
T
C
= 25°C
Collector current I
C
(A)
–8
5
1.
–6
1.0
0.9
0.8
0.7
10000
3000
1000
300
100
30
–0.3
P
C
=
50
W
5
°
C
=7
5
2
Ta
5
–2
0.6
0.5
–4
0.4 mA
–2
I
B
= 0
0
–6
–8
–10
–2
–4
Collector to emitter voltage V
CE
(V)
–1.0
–3
–10
Collector current I
C
(A)
–30
3
2SB955(K)
Collector to emitter saturation voltage V
CE(sat)
(V)
Base to emitter saturation voltage V
BE(sat)
(V)
Saturation Voltage vs. Collector Current
–10
–3
–1.0
V
CE(sat)
–0.3
–0.1
–0.03
–0.01
–0.3
Ta = 25°C
Pulse
I
C
/I
B
= 100
200
10
V
BE(sat)
500
3
Switching time t (µs)
1.0
0.3
0.1
0.03
0.01
–0.3
t
stg
t
on
t
f
Switching Time vs. Collector Current
V
CC
= –30 V
I
C
= 500 I
B1
= –500 I
B2
Ta = 25°C
–1.0
–3
–10
Collector current I
C
(A)
–30
–1.0
–3
–10
Collector current I
C
(A)
–30
Diode Current vs. Forward Voltage
10
8
Diode current I
D
(A)
6
4
2
T
C
= 25°C
0
1
2
3
4
Diode forward voltage V
F
(V)
5
4
2SB955(K)
Package Dimensions
Unit: mm
11.5 MAX
2.79
±
0.2
10.16
±
0.2
9.5
8.0
φ
3.6
-0.08
+0.1
4.44
±
0.2
1.26
±
0.15
6.4
+0.2
–0.1
18.5
±
0.5
15.0
±
0.3
1.27
2.7 MAX
14.0
±
0.5
1.5 MAX
7.8
±
0.5
0.76
±
0.1
2.54
±
0.5
2.54
±
0.5
0.5
±
0.1
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
TO-220AB
Conforms
Conforms
1.8 g
5
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