DISCRETE SEMICONDUCTORS
DATA SHEET
BCV26; BCV46
PNP Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 08
2004 Jan 13
NXP Semiconductors
Product data sheet
PNP Darlington transistors
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 60 V)
•
Very high DC current gain (min. 10 000).
APPLICATIONS
•
Where very high amplification is required.
DESCRIPTION
PNP Darlington transistor in a SOT23 plastic package.
NPN complements: BCV27 and BCV47.
MARKING
TYPE NUMBER
BCV26
BCV46
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
ORDERING INFORMATION
TYPE
NUMBER
BCV26
BCV46
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
MARKING CODE
(1)
FD*
FE*
1
Top view
2
handbook, halfpage
BCV26; BCV46
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
1
3
TR1
TR2
2
MAM299
Fig.1 Simplified outline (SOT23) and symbol.
VERSION
SOT23
2004 Jan 13
2
NXP Semiconductors
Product data sheet
PNP Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCV26
BCV46
V
CES
collector-emitter voltage
BCV26
BCV46
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
V
BE
= 0
−
−
−
−
−
−
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BCV26; BCV46
MIN.
MAX.
−40
−80
−30
−60
−10
−500
−800
−100
250
+150
150
+150
V
V
V
V
V
UNIT
mA
mA
mA
mW
°C
°C
°C
VALUE
500
UNIT
K/W
2004 Jan 13
3
NXP Semiconductors
Product data sheet
PNP Darlington transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector cut-off current
BCV26
BCV46
I
EBO
h
FE
emitter cut-off current
DC current gain
BCV26
BCV46
DC current gain
BCV26
BCV46
DC current gain
BCV26
BCV46
V
CEsat
V
BEsat
V
BEon
f
T
collector-emitter saturation
voltage
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−100
mA; I
B
=
−0.1
mA
I
C
=
−10
mA; V
CE
=
−5
V
I
C
=
−100
mA; V
CE
=
−5
V; (see Fig.2)
I
C
=
−10
mA; V
CE
=
−5
V; (see Fig.2)
I
E
= 0; V
CB
=
−30
V
I
E
= 0; V
CB
=
−60
V
I
C
= 0; V
EB
=
−10
V
I
C
=
−1
mA; V
CE
=
−5
V; (see Fig.2)
−
−
−
CONDITIONS
BCV26; BCV46
MIN.
TYP. MAX. UNIT
−
−
−
−
−
−100
−100
−100
−
−
−
−
−
−
−1
−1.5
−1.4
−
V
V
V
MHz
nA
nA
nA
4 000
2 000
10 000
−
4 000
−
20 000
−
10 000
−
−
−
−
−
−
−
220
I
C
=
−30
mA; V
CE
=
−5
V; f = 100 MHz
−
handbook, full pagewidth
100000
hFE
80000
MGD836
60000
40000
20000
0
−1
V
CE
=
−2
V.
−10
−10
2
IC (mA)
−10
3
Fig.2 DC current gain; typical values.
2004 Jan 13
4
NXP Semiconductors
Product data sheet
PNP Darlington transistors
PACKAGE OUTLINE
Plastic surface-mounted package; 3 leads
BCV26; BCV46
SOT23
D
B
E
A
X
HE
v
M
A
3
Q
A
A1
1
e1
e
bp
2
w
M
B
detail X
Lp
c
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A
1
max.
0.1
b
p
0.48
0.38
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e
1
0.95
H
E
2.5
2.1
L
p
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
OUTLINE
VERSION
SOT23
REFERENCES
IEC
JEDEC
TO-236AB
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-11-04
06-03-16
2004 Jan 13
5
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