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BCV46

Description
500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
CategoryDiscrete semiconductor    The transistor   
File Size56KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BCV46 Overview

500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236

BCV46 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSOT-23
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)10000
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)220 MHz
VCEsat-Max1 V
DISCRETE SEMICONDUCTORS
DATA SHEET
BCV26; BCV46
PNP Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 08
2004 Jan 13

BCV46 Related Products

BCV46 BCV26
Description 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 300 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker NXP NXP
Parts packaging code SOT-23 SOT-23
package instruction PLASTIC PACKAGE-3 PLASTIC PACKAGE-3
Contacts 3 3
Reach Compliance Code compli compliant
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.5 A 0.5 A
Collector-emitter maximum voltage 60 V 30 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 10000 20000
JEDEC-95 code TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 0.25 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal surface Tin (Sn) Tin (Sn)
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 30 30
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 220 MHz 220 MHz
VCEsat-Max 1 V 1 V
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