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BCW61D

Description
200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size55KB,6 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BCW61D Overview

200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BCW61D Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNXP
package instruction,
Reach Compliance Codeunknow
Is SamacsysN
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)380
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BCW61 series
PNP general purpose transistors
Product data sheet
Supersedes data of 1997 May 28
1999 Apr 12

BCW61D Related Products

BCW61D BCW61B BCW61C BCW61
Description 200 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR PNP general purpose transistors PNP general purpose transistors PNP general purpose transistors
Is it Rohs certified? incompatible incompatible incompatible -
Maker NXP NXP NXP -
Reach Compliance Code unknow unknow unknow -
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A -
Configuration Single Single Single -
Minimum DC current gain (hFE) 380 140 250 -
JESD-609 code e0 e0 e0 -
Maximum operating temperature 150 °C 150 °C 150 °C -
Polarity/channel type PNP PNP PNP -
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W -
surface mount YES YES YES -
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -

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Index Files: 2187  1148  1593  2563  699  45  24  33  52  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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