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BAV199WT-TP-HF

Description
Rectifier Diode,
CategoryDiscrete semiconductor    diode   
File Size377KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
Download Datasheet Parametric View All

BAV199WT-TP-HF Overview

Rectifier Diode,

BAV199WT-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current0.16 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.2 W
Maximum repetitive peak reverse voltage85 V
Maximum reverse recovery time3 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAV199WT
Features
Low Current Leakage
Forward Current:I
F
=160mA.
Small Outline Surface Mount Package
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Marking: K52
Lead Free Finish/Rohs Compliant ("P"Suffix designates
RoHS Compliant. See ordering information)
Halogen
free available upon request by adding suffix "-HF"
Dual Series
Switching Diode
SOT-323
A
D
Maximum Ratings
@ 25°C Unless Otherwise Specified
Parameter
Working Peak Reverse Voltage
RMS Reverse Voltage
Average Rectified
Output Current
Non-Repetitive Peak
Forward Surge
Current
Symbol
V
RWM
V
R(RMS)
I
O
I
FSM
Value
85V
85V
F
E
B
C
Peak Repetitive Reverse Voltage V
RRM
60V
160mA
4A
1A
0.5A
@1us
@1ms
@1s
G
H
J
K
DIMENSIONS
INCHES
MIN
MAX
.071
.087
.045
.053
.083
.096
.026 Nominal
.047
.055
.012
.016
.000
.004
.035
.039
.004
.010
.006
.016
MM
MIN
MAX
1.80
2.20
1.15
1.35
2.10
2.45
0.65Nominal
1.20
1.40
.30
.40
.000
.100
.90
1.00
.100
.250
.15
.40
Power Dissipation
P
TOT
Thermal Resistance Junction to Ambient
R
thJA
Operating Temperature
T
J
Storage Temperature
T
stg
200mW
625
o
C/W
-55°C to +150°C
-55°C to +150°C
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
V
B
R
Parameter
Reverse Breakdown Voltage
(I
R
-100uA)
Forward Voltage
I
F
=1.0mA
I
F
=10mA
I
F
=50mA
I
F
=150mA
Leakage Current
(V
R
=75V)
Junction Capacitance
(V
R
=0, f=1.0MHz)
Reverse recovery time
Min
85
---
---
---
---
---
Typ
---
---
---
---
---
---
Max
---
0.90
1.00
1.10
1.25
5.0
Unit
V
DIM
A
B
C
D
E
F
G
H
J
K
NOTE
Suggested Solder
Pad Layout
0.70
V
F
V
0.90
I
R
nA
1.90
C
j
t
rr
---
---
2.0
---
---
3.0
pF
us
0.65
0.65
Revision:
A
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