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2SD787E

Description
2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size48KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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2SD787E Overview

2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN

2SD787E Parametric

Parameter NameAttribute value
Parts packaging codeTO-92
package instructionTO-92MOD, 3 PIN
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage16 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.9 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003

2SD787E Related Products

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Description 2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN 2000mA, 20V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92MOD, 3 PIN
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN TO-92MOD, 3 PIN
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code compli compli compli compli compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 2 A 2 A 2 A 2 A 2 A 2 A 2 A 2 A
Collector-emitter maximum voltage 16 V 16 V 16 V 16 V 20 V 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 400 160 250 100 160 250 100 400
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 0.9 W 0.9 W 0.9 W 0.9 W 0.9 W 0.9 W 0.9 W 0.9 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz 100 MHz
Base Number Matches 1 1 1 1 1 1 1 1
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