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ON Semiconductort
Amplifier Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
P
D
T
J
, T
stg
2N5400
120
130
5.0
600
625
5.0
1.5
12
–55 to +150
2N5401
150
160
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
2N5401*
*ON Semiconductor Preferred Device
1
2
3
CASE 29–11, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
2
BASE
COLLECTOR
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
1
EMITTER
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 120 Vdc, I
E
= 0)
(V
CB
= 120 Vdc, I
E
= 0, T
A
= 100°C)
Emitter Cutoff Current
(V
EB
= 3.0 Vdc, I
C
= 0)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
2N5401
2N5401
I
EBO
V
(BR)CEO
2N5400
2N5401
V
(BR)CBO
2N5400
2N5401
V
(BR)EBO
I
CBO
—
—
—
50
50
50
nAdc
160
5.0
—
—
Vdc
150
—
Vdc
Vdc
Preferred
devices are ON Semiconductor recommended choices for future use and best overall value.
©
Semiconductor Components Industries, LLC, 2001
65
June, 2001 – Rev. 0
Publication Order Number:
2N5401/D
2N5401
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
(1)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 50 mAdc, V
CE
= 5.0 Vdc)
Collector–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
(I
C
= 50 mAdc, I
B
= 5.0 mAdc)
h
FE
50
60
50
V
CE(sat)
—
—
V
BE(sat)
—
—
1.0
1.0
0.2
0.5
Vdc
—
240
—
Vdc
—
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
Noise Figure
(I
C
= 250
µAdc,
V
CE
= 5.0 Vdc, R
S
= 1.0 kΩ, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2.0%.
f
T
100
C
obo
h
fe
40
NF
—
200
8.0
dB
—
300
6.0
pF
—
MHz
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66
2N5401
200
150
h FE, CURRENT GAIN
100
70
50
-55°C
30
20
V
CE
= -1.0 V
V
CE
= -5.0 V
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
I
C
, COLLECTOR CURRENT (mA)
10
20
30
50
100
25°C
T
J
= 125°C
Figure 1. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1.0
I
B
, BASE CURRENT (mA)
2.0
5.0
10
20
50
I
C
= 1.0 mA
10 mA
30 mA
100 mA
Figure 2. Collector Saturation Region
10
3
IC, COLLECTOR CURRENT (
µ
A)
10
2
10
1
T
J
= 125°C
10
0
10
-1
10
-2
10
-3
0.3
75°C
REVERSE
25°C
FORWARD
V
CE
= 30 V
I
C
= I
CES
0.2
0.1
0
0.1
0.2 0.3 0.4
0.5
V
BE
, BASE-EMITTER VOLTAGE (VOLTS)
0.6
0.7
Figure 3. Collector Cut–Off Region
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67
2N5401
0.9
0.8
V, VOLTAGE (VOLTS)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
1.0
T
J
= 25°C
2.5
2.0
1.5
1.0
0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
0.1
θ
VB
for V
BE(sat)
0.2 0.3 0.5 1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
θ
VC
for V
CE(sat)
T
J
= -55°C to 135°C
0.2 0.3 0.5
1.0 2.0 3.0 5.0
10
20 30
I
C
, COLLECTOR CURRENT (mA)
50
100
Figure 4. “On” Voltages
Figure 5. Temperature Coefficients
10.2 V
V
in
10
µs
INPUT PULSE
t
r
, t
f
≤
10 ns
DUTY CYCLE = 1.0%
C, CAPACITANCE (pF)
V
BB
+8.8 V
100
0.25
µF
R
B
5.1 k
V
in
100
1N914
3.0 k
V
CC
-30 V
R
C
V
out
100
70
50
30
20
10
7.0
5.0
3.0
2.0
1.0
0.2
0.3
2.0 3.0
5.0 7.0
0.5 0.7 1.0
V
R
, REVERSE VOLTAGE (VOLTS)
C
ibo
T
J
= 25°C
C
obo
Values Shown are for I
C
@ 10 mA
10
20
Figure 6. Switching Time Test Circuit
Figure 7. Capacitances
1000
700
500
300
t, TIME (ns)
200
100
70
50
30
20
I
C
/I
B
= 10
T
J
= 25°C
2000
t
r
@ V
CC
= 120 V
t
r
@ V
CC
= 30 V
t, TIME (ns)
1000
700
500
300
200
100
70
50
30
50
100
200
20
0.2 0.3 0.5
1.0
2.0 3.0 5.0
10
20 30
50
100
200
I
C
/I
B
= 10
T
J
= 25°C
t
f
@ V
CC
= 30 V
t
s
@ V
CC
= 120 V
t
f
@ V
CC
= 120 V
t
d
@ V
BE(off)
= 1.0 V
V
CC
= 120 V
1.0
2.0 3.0 5.0
10
20 30
10
0.2 0.3 0.5
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. Turn–On Time
Figure 9. Turn–Off Time
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68
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