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BYV28-100(Z)

Description
Rectifier Diode, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, DO-27,
CategoryDiscrete semiconductor    diode   
File Size57KB,2 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Environmental Compliance
Download Datasheet Parametric Compare View All

BYV28-100(Z) Overview

Rectifier Diode, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, DO-27,

BYV28-100(Z) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationSUPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.02 V
JEDEC-95 codeDO-27
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current90 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse current5 µA
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
BL
FEATURES
Low cos t
GALAXY ELECTRICAL
BYV28-50(Z)-BYV28-600(Z)
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 3.5, 3.0 A
SUPER FAST RECT IFIER
DO - 27
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with alcohol,Is opropanol
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces ,1.15 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
BYV28 BYV28 BYV28 BYV28 BYV28 BYV28 BYV28
UNITS
-100
-50
-150
-200
-300
-400
-600
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
@T
A
=75
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
3.5
200
140
200
300
210
300
400
280
400
600
420
600
3.0
V
V
V
A
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
1.02
90.0
A
Maximum instantaneous f orw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.05
5.0
100.0
1.25
V
A
25
100
75
- 55 ----- + 150
- 55 ----- + 150
50
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.1V D C.
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0264015
BL
GALAXY ELECTRICAL
1.

BYV28-100(Z) Related Products

BYV28-100(Z) BYV28-200(Z) BYV28-50(Z) BYV28-150(Z) BYV28-600(Z)
Description Rectifier Diode, 1 Phase, 1 Element, 3.5A, 100V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3.5A, 200V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3.5A, 50V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3.5A, 150V V(RRM), Silicon, DO-27, Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-27,
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd. Galaxy Semi-Conductor Co., Ltd.
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
application SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY SUPER FAST RECOVERY
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.02 V 1.02 V 1.02 V 1.02 V 1.25 V
JEDEC-95 code DO-27 DO-27 DO-27 DO-27 DO-27
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 90 A 90 A 90 A 90 A 90 A
Number of components 1 1 1 1 1
Phase 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 3.5 A 3.5 A 3.5 A 3.5 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 100 V 200 V 50 V 150 V 600 V
Maximum reverse current 5 µA 5 µA 5 µA 5 µA 5 µA
Maximum reverse recovery time 0.025 µs 0.025 µs 0.025 µs 0.025 µs 0.05 µs
surface mount NO NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
Is Samacsys - N N N -
Base Number Matches - 1 1 1 -

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