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BZT03D110

Description
Zener Diode, 110V V(Z), 10%, 1.3W, Silicon, Unidirectional, DO-15,
CategoryDiscrete semiconductor    diode   
File Size129KB,4 Pages
ManufacturerGalaxy Semi-Conductor Co., Ltd.
Download Datasheet Parametric View All

BZT03D110 Overview

Zener Diode, 110V V(Z), 10%, 1.3W, Silicon, Unidirectional, DO-15,

BZT03D110 Parametric

Parameter NameAttribute value
MakerGalaxy Semi-Conductor Co., Ltd.
package instructionO-XALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance250 Ω
JEDEC-95 codeDO-15
JESD-30 codeO-XALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation1.3 W
Nominal reference voltage110 V
surface mountNO
technologyZENER
Terminal formWIRE
Terminal locationAXIAL
Maximum voltage tolerance10%
Working test current5 mA
BL
GALAXY ELECTRICAL
BZT03---SERIES
V
Z
:
6.2 -- 270 V
POWER DISSIPATION: 1.3W
DO -- 15
ZENER DIODES
FEATURES
Glass passivated junction
Hermetically sealed package
Clamping time in picoseconds
MECHANICAL DATA
Case:JEDEC DO-15
Terminals: Axial leads solderable per MIL-
STD-202,Method 208
Polarity: Color band denotes cathods end
Weight: 0.014 ounces,0.39 grams
Mounting position: any
Maximum Ratings and Thermal Characteristics
Parameter
Power dissipation at T
A
=25℃
Forward voltage @I
F
=0.5A
Maximum thermal resistance
junction to ambient (Note 1)
Peak reverse power dissipation
tp=100µs square wave
Junction temperature
Storage temperature range
Note:1.On PC board with spacing 25mm
(T
A
=25℃ unless otherwise noted)
Symbol
P
tot
V
F
R
θJA
P
ZSM
T
J
T
STG
Value
1.3
1.2
100
600
175
-65 to +175
Unit
W
V
℃/W
W
www.galaxycn.com
Document Number 0284017
BL
GALAXY ELECTRICAL
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