2SC4617-S datasheet, PDF - EEWORLD Datasheet

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2SC4617-S: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size340KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SC4617-S Overview

Small Signal Bipolar Transistor

2SC4617-S Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	270
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Base Number Matches	1

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2SC4617

Elektronische Bauelemente

0.15A , 60V

NPN Silicon General Purpose Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

Low C

ob

. C

ob

=2.0pF

Complement of 2SA1774

A

M

3

SOT-523

3

Top View

CLASSIFICATION OF h

FE

Product-Rank

Range

Marking

2SC4617-Q

120~270

BQ

2SC4617-R

180~390

BR

2SC4617-S

270~560

BS

F

K

C B

1

2

1

L

E

D

G

REF.

Millimeter

Min.

Max.

1.5

1.7

1.45

1.75

0.75

0.85

0.7

0.9

1.1

0.15

0.25

H

REF.

G

H

J

K

L

M

J

Millimeter

Min.

Max.

-

0.1

0.55 REF.

0.1

0.2

-

0.5 TYP.

0.25

0.325

PACKAGE INFORMATION

Package

SOT-523

MPQ

3K

LeaderSize

7’ inch

A

B

C

D

E

F

Collector

3

1

Base

2

Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Currrent

Collector Power Dissipation

Junction & Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Ratings

60

50

7

150

150, -55 ~ 150

Unit

V

mA

mW

℃

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage *

DC current gain

Transition frequency

Collector output capacitance

*

Pulse Test :Pulse Width

≤300us,D.C ≤

2%

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

C

ob

Min.

60

50

7

-

120

-

Typ.

-

180

-

Max.

-

0.1

0.4

560

-

3.5

Unit

V

μA

V

Test Conditions

I

C

=50μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=50μA, I

C

=0

V

CB

=60V, I

E

=0

V

EB

= 7V, I

C

=0

I

C

=50mA, I

B

=5mA

V

CE

=6V, I

C

=1mA

MHz

pF

V

CE

=12V, I

E

=2mA, f=100MHz

V

CB

=12V, I

E

=0, f=1MHz

24-Feb-2011 Rev. D

Page 1 of 2

2SC4617-S Related Products

	2SC4617-S	2SC4617-Q	2SC4617-Q-C	2SC4617-R	2SC4617-R-C	2SC4617-S-C	2SC4617-C
Description	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	270	120	120	180	180	270	120
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz
Base Number Matches	1	1	1	1	1	1	-

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