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HM6-6617/883

Description
2KX8 OTPROM, 140ns, CDIP24
Categorystorage    storage   
File Size93KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
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HM6-6617/883 Overview

2KX8 OTPROM, 140ns, CDIP24

HM6-6617/883 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerRenesas Electronics Corporation
Parts packaging codeDIP
package instructionSIDE BRAZED, DIP-24
Contacts24
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time140 ns
JESD-30 codeR-GDIP-T24
JESD-609 codee0
memory density16384 bit
Memory IC TypeOTP ROM
memory width8
Number of functions1
Number of terminals24
word count2048 words
character code2000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2KX8
Package body materialCERAMIC, GLASS-SEALED
encapsulated codeDIP
Encapsulate equivalent codeDIP24,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
power supply5 V
Certification statusNot Qualified
Filter level38535Q/M;38534H;883B
Maximum standby current0.0001 A
Maximum slew rate0.046 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
HM-6617/883
January 2001
2K x 8 CMOS PROM
Description
The HM-6617/883 is a 16,384-bit fuse link CMOS PROM in
a 2K word by 8-bit/word format with “Three-State” outputs.
This PROM is available in the standard 0.600 inch wide 24
pin SBDIP, the 0.300 inch wide slim SBDIP, and the JEDEC
standard 32 pad CLCC.
The HM-6617/883 utilizes a synchronous design technique.
This includes on-chip address latches and a separate output
enable control which makes this device ideal for applications
utilizing recent generation microprocessors. This design
technique, combined with the Intersil advanced self-aligned
silicon gate CMOS process technology offers ultra-low
standby current. Low ICCSB is ideal for battery applications
or other systems with low power requirements.
The Intersil NiCr fuse link technology is utilized on this and
other Intersil CMOS PROMs. This gives the user a PROM
with permanent, stable storage characteristics over the full
industrial and military temperature voltage ranges. NiCr fuse
technology combined with the low power characteristics of
CMOS provides an excellent alternative to standard bipolar
PROMs or NMOS EPROMs.
All bits are manufactured storing a logical “0” and can be
selectively programmed for a logical “1” at any bit location.
Features
• This Circuit is Processed in Accordance to MIL-STD-
883 and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Low Power Standby and Operating Power
- ICCSB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .100µA
- ICCOP . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA at 1MHz
• Fast Access Time. . . . . . . . . . . . . . . . . . . . . . . 90/120ns
• Industry Standard Pinout
• Single 5.0V Supply
• CMOS/TTL Compatible Inputs
• High Output Drive . . . . . . . . . . . . . . . . 12 LSTTL Loads
• Synchronous Operation
• On-Chip Address Latches
• Separate Output Enable
• Operating Temperature Range . . . . . . -55
o
C to +125
o
C
Ordering Information
PACKAGE
SBDIP
SLIM SBDIP
CLCC
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
-55
o
C to +125
o
C
90ns
HM1-6617B/883
HM6-6617B/883
HM4-6617B/883
120ns
HM1-6617/883
HM6-6617/883
HM4-6617/883
PACKAGE NO.
D24.6
D24.3
J32.A
Pinouts
HM-6617/883 (SBDIP)
TOP VIEW
A7
HM-6617/883 (CLCC)
TOP VIEW
V
CC
NC
NC
NC
NC
NC
PIN DESCRIPTION
PIN
29 A8
28 A9
27 NC
26 P
25 G
24 A10
23 E
22 Q7
21 Q6
DESCRIPTION
No Connect
Address Inputs
Chip Enable
Data Output
Power (+5V)
Output Enable
Program Enable
A7
A6
A5
A4
A3
A2
A1
A0
Q0
1
2
3
4
5
6
7
8
9
24 V
CC
23 A8
22 A9
21 P
20 G
19 A10
18 E
17 Q7
16 Q6
15 Q5
14 Q4
13 Q3
4
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
Q0 13
3
2
1
32 31 30
NC
A0-A10
E
Q
V
CC
G
P (Note)
Q1 10
Q2 11
GND 12
14 15 16 17 18 19 20
Q1
Q2
Q3
Q4
GND
NC
Q5
NOTE: P should be hardwired to V
CC
except during programming.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143
|
Copyright
©
Intersil Corporation 2001
File Number
3016.2
1

HM6-6617/883 Related Products

HM6-6617/883 HM1-6617B/883 HM6-6617B/883 HM4-6617B/883 HM4-6617/883
Description 2KX8 OTPROM, 140ns, CDIP24 2KX8 OTPROM, 105ns, CDIP24 2KX8 OTPROM, 105ns, CDIP24 2KX8 OTPROM, 105ns, CQCC32 2KX8 OTPROM, 140ns, CQCC32
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible
Maker Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation Renesas Electronics Corporation
Parts packaging code DIP DIP DIP QFJ QFJ
package instruction SIDE BRAZED, DIP-24 SIDE BRAZED, DIP-24 SIDE BRAZED, DIP-24 QCCN, LCC32,.45X.55 CERAMIC, LCC-32
Contacts 24 24 24 32 32
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 140 ns 105 ns 105 ns 105 ns 140 ns
JESD-30 code R-GDIP-T24 R-GDIP-T24 R-GDIP-T24 R-CQCC-N32 R-CQCC-N32
JESD-609 code e0 e0 e0 e0 e0
memory density 16384 bit 16384 bit 16384 bit 16384 bit 16384 bit
Memory IC Type OTP ROM OTP ROM OTP ROM OTP ROM OTP ROM
memory width 8 8 8 8 8
Number of functions 1 1 1 1 1
Number of terminals 24 24 24 32 32
word count 2048 words 2048 words 2048 words 2048 words 2048 words
character code 2000 2000 2000 2000 2000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
organize 2KX8 2KX8 2KX8 2KX8 2KX8
Package body material CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code DIP DIP DIP QCCN QCCN
Encapsulate equivalent code DIP24,.3 DIP24,.6 DIP24,.3 LCC32,.45X.55 LCC32,.45X.55
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
power supply 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Filter level 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B 38535Q/M;38534H;883B
Maximum standby current 0.0001 A 0.0001 A 0.0001 A 0.0001 A 0.0001 A
Maximum slew rate 0.046 mA 0.052 mA 0.052 mA 0.052 mA 0.046 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V
surface mount NO NO NO YES YES
technology CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE NO LEAD NO LEAD
Terminal pitch 2.54 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL QUAD QUAD
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