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2SK2940(S)-(2)

Description
TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,45A I(D),TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size64KB,12 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric Compare View All

2SK2940(S)-(2) Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,45A I(D),TO-263AB

2SK2940(S)-(2) Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codecompli
ConfigurationSingle
Maximum drain current (Abs) (ID)45 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)75 W
surface mountYES
Base Number Matches1
2SK2940(L),2SK2940(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-563B (Z)
3rd. Edition
Jul. 1998
Features
Low on-resistance
R
DS
=0.010
typ.
High speed switching
4V gate drive device can be driven from 5V source
Outline
LDPAK
4
4
D
1
G
1
2
3
2
3
S
1. Gate
2. Drain
3. Source
4. Drain

2SK2940(S)-(2) Related Products

2SK2940(S)-(2) 2SK2940(S)-(1)
Description TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,45A I(D),TO-263AB TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,45A I(D),TO-263ABVAR
Reach Compliance Code compli compli
Configuration Single Single
Maximum drain current (Abs) (ID) 45 A 45 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 75 W 75 W
surface mount YES YES
Base Number Matches 1 1
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