BSM25GD120DN2 datasheet, PDF - EEWORLD Datasheet

BSM25GD120DN2: DescriptionInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel; CategoryDiscrete semiconductor The transistor; File Size198KB，10 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-CUFM-T17
Reach Compliance Code	unknow
Shell connection	ISOLATED
Maximum collector current (IC)	35 A
Collector-emitter maximum voltage	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)	100 ns
Gate emitter threshold voltage maximum	6.5 V
Gate-emitter maximum voltage	20 V
JESD-30 code	R-CUFM-T17
Number of components	6
Number of terminals	17
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1200 W
Certification status	Not Qualified
Maximum rise time (tr)	130 ns
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	UPPER
Transistor component materials	SILICON
Maximum off time (toff)	600 ns
Nominal off time (toff)	400 ns
Maximum opening time (tons)	150 ns
Nominal on time (ton)	75 ns
VCEsat-Max	3 V
Base Number Matches	1

	BSM25GD120DN2	BSM25GD120DN2E3224
Description	Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel	Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
package instruction	FLANGE MOUNT, R-CUFM-T17	FLANGE MOUNT, R-CUFM-T17
Reach Compliance Code	unknow	unknow
Shell connection	ISOLATED	ISOLATED
Maximum collector current (IC)	35 A	35 A
Collector-emitter maximum voltage	1200 V	1200 V
Configuration	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE	BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Maximum landing time (tf)	100 ns	100 ns
Gate emitter threshold voltage maximum	6.5 V	6.5 V
Gate-emitter maximum voltage	20 V	20 V
JESD-30 code	R-CUFM-T17	R-CUFM-T17
Number of components	6	6
Number of terminals	17	17
Maximum operating temperature	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	1200 W	1200 W
Certification status	Not Qualified	Not Qualified
Maximum rise time (tr)	130 ns	130 ns
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	UPPER	UPPER
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	600 ns	600 ns
Nominal off time (toff)	400 ns	400 ns
Maximum opening time (tons)	150 ns	150 ns
Nominal on time (ton)	75 ns	75 ns
VCEsat-Max	3 V	3 V
Base Number Matches	1	1

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