K4T51163QM-GLC4 datasheet, PDF

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K4T51163QM-GLC4: DescriptionDDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, FBGA-84; Categorystorage storage; File Size486KB，66 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4T51163QM-GLC4 Overview

DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, FBGA-84

K4T51163QM-GLC4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	VFBGA,
Contacts	84
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	0.6 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B84
JESD-609 code	e0
length	14.5 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	84
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	32MX16
Package body material	PLASTIC/EPOXY
encapsulated code	VFBGA
Package shape	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum seat height	1 mm
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	OTHER
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	12.3 mm

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512Mb M-die DDR-II SDRAM

Target

512Mb M-die DDR-II SDRAM Specification

Version 0.11

Rev. 0.11 (Apr. 2002)

Page 1 of 66

K4T51163QM-GLC4 Related Products

	K4T51163QM-GLC4	K4T51043QM-GLC4	K4T51043QM-GCC4	K4T51083QM-GLC4	K4T51083QM-GCC4	K4T51163QM-GCC4
Description	DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, FBGA-84	DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 128MX4, 0.6ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 64MX8, 0.6ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 64MX8, 0.6ns, CMOS, PBGA60, FBGA-60	DDR DRAM, 32MX16, 0.6ns, CMOS, PBGA84, FBGA-84
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG	SAMSUNG
Parts packaging code	BGA	BGA	BGA	BGA	BGA	BGA
package instruction	VFBGA,	VFBGA,	VFBGA,	VFBGA,	VFBGA,	VFBGA,
Contacts	84	60	60	60	60	84
Reach Compliance Code	compliant	compliant	compliant	compliant	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	0.6 ns	0.6 ns	0.6 ns	0.6 ns	0.6 ns	0.6 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B84	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B60	R-PBGA-B84
JESD-609 code	e0	e0	e0	e0	e0	e0
length	14.5 mm	14.5 mm	14.5 mm	14.5 mm	14.5 mm	14.5 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bi	536870912 bi
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	16	4	4	8	8	16
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	84	60	60	60	60	84
word count	33554432 words	134217728 words	134217728 words	67108864 words	67108864 words	33554432 words
character code	32000000	128000000	128000000	64000000	64000000	32000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
organize	32MX16	128MX4	128MX4	64MX8	64MX8	32MX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA	VFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	GRID ARRAY, VERY THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	1 mm	1 mm	1 mm	1 mm	1 mm	1 mm
self refresh	YES	YES	YES	YES	YES	YES
Maximum supply voltage (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	12.3 mm	12.3 mm	12.3 mm	12.3 mm	12.3 mm	12.3 mm

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