GM71V64403CJ-5 datasheet, PDF - EEWORLD Datasheet

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GM71V64403CJ-5: DescriptionEDO DRAM, 16MX4, 50ns, CMOS, PDSO32,; Categorystorage storage; File Size1MB，25 Pages; ManufacturerLG Semicon Co., Ltd.

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GM71V64403CJ-5 Overview

EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,

GM71V64403CJ-5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LG Semicon Co., Ltd.
Reach Compliance Code	unknown
access mode	FAST PAGE WITH EDO
Maximum access time	50 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-J32
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	32
word count	16777216 words
character code	16000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	16MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ32,.44
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	NO
Maximum standby current	0.0005 A
Maximum slew rate	0.14 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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GM71V64403CJ-5 Related Products

	GM71V64403CJ-5	GM71VS64403CLT-5	GM71V64403CJ-6	GM71V64403CT-5	GM71V64403CT-6	GM71VS64403CLJ-5	GM71VS64403CLJ-6	GM71VS64403CLT-6
Description	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 50ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,	EDO DRAM, 16MX4, 60ns, CMOS, PDSO32,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.	LG Semicon Co., Ltd.
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
access mode	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO	FAST PAGE WITH EDO
Maximum access time	50 ns	50 ns	60 ns	50 ns	60 ns	50 ns	60 ns	60 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH; BATTERY BACKUP OPERATION
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDSO-J32	R-PDSO-G32	R-PDSO-J32	R-PDSO-G32	R-PDSO-G32	R-PDSO-J32	R-PDSO-J32	R-PDSO-G32
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM	EDO DRAM
memory width	4	4	4	4	4	4	4	4
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32
word count	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000	16000000	16000000	16000000	16000000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	16MX4	16MX4	16MX4	16MX4	16MX4	16MX4	16MX4	16MX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	SOJ	TSOP	SOJ	TSOP	TSOP	SOJ	SOJ	TSOP
Encapsulate equivalent code	SOJ32,.44	TSOP32,.46	SOJ32,.44	TSOP32,.46	TSOP32,.46	SOJ32,.44	SOJ32,.44	TSOP32,.46
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192	8192	8192	8192
self refresh	NO	YES	NO	NO	NO	YES	YES	YES
Maximum standby current	0.0005 A	0.0003 A	0.0005 A	0.0005 A	0.0005 A	0.0003 A	0.0003 A	0.0003 A
Maximum slew rate	0.14 mA	0.14 mA	0.13 mA	0.14 mA	0.13 mA	0.14 mA	0.13 mA	0.13 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	J BEND	GULL WING	J BEND	GULL WING	GULL WING	J BEND	J BEND	GULL WING
Terminal pitch	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED

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