X BAND, 10pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, GLASS PACKAGE-2
| Parameter Name | Attribute value |
| Maker | TE Connectivity |
| package instruction | O-LALF-W2 |
| Contacts | 2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Minimum breakdown voltage | 60 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 5% |
| Minimum diode capacitance ratio | 7.3 |
| Nominal diode capacitance | 10 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | X BAND |
| JESD-30 code | O-LALF-W2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -65 °C |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Maximum power dissipation | 0.2 W |
| Certification status | Not Qualified |
| minimum quality factor | 700 |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Varactor Diode Classification | ABRUPT |
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