LMUN5213DW1T3G datasheet, PDF - EEWORLD Datasheet

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LMUN5213DW1T3G: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size238KB，10 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LMUN5213DW1T3G Overview

Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon,

LMUN5213DW1T3G Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	80
Number of components	2
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.385 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Dual Bias ResistorTransistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a base–emitter resistor. These

digital transistors are designed to replace a single device and its external resistor bias network.

The BRT eliminates these individual components by integrating them into a single device. In

the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which

is ideal for low power surface mount applications where board space is at a premium.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

LMUN5211DW1T1G

Series

S-LMUN5211DW1T1G

Series

SC-88/SOT-363

• We declare that the material of product compliance with RoHS requirements.

•

S- Prefix for Automotive and Other Applications Requiring Unique Site and

Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

MAXIMUM RATINGS

= 25°C unless otherwise noted, common for Q

and Q

)

Rating

Symbol Value

Unit

Collector-Base Voltage

CBO

Vdc

Collector-Emitter Voltage

CEO

Vdc

Collector Current

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation

187 (Note 1.)

256 (Note 2.)

= 25°C

1.5 (Note 1.)

mW/°C

Derate above 25°C

2.0 (Note 2.)

Thermal Resistance –

Junction-to-Ambient

Characteristic

(Both Junctions Heated)

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature

1. FR–4 @ Minimum Pad

θJA

670 (Note 1.)

490 (Note 2.)

°C/W

MARKING DIAGRAM

7X = Device Marking

(See Page 2)

Symbol

Max

250 (Note 1.)

385 (Note 2.)

2.0 (Note 1.)

3.0 (Note 2.)

493 (Note 1.)

325 (Note 2.)

188 (Note 1.)

208 (Note 2.)

–55 to +150

Unit

mW/°C

°C/W

°C

DEVICE MARKING

INFORMATION

See specific marking information in

the device marking table on page 2 of

this data sheet.

θJA

θJL

, T

stg

2. FR–4 @ 1.0 x 1.0 inch Pad

Rev.A 1/10

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