LMUN2241T1 datasheet, PDF - EEWORLD Datasheet

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LMUN2241T1: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size177KB，12 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LMUN2241T1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,

LMUN2241T1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Minimum DC current gain (hFE)	160
Number of components	1
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.338 W
surface mount	YES
Transistor component materials	SILICON

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LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single device and

its external resistor bias network. The BRT (Bias Resistor Transistor) contains a

single transistor with a monolithic bias network consisting of two resistors; a

series base resistor and a base–emitter resistor. The BRT eliminates these indi-

vidual components by

integrating them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC–59 package which is

designed for low power surface mount applications.

• Simplifies Circuit Design

• Reduces Board Space

• Reduces Component Count

• Moisture Sensitivity Level: 1

• ESD Rating – Human Body Model: Class 1

ESD Rating

– Machine Model: Class B

• The SC–59 package can be soldered using wave or reflow. The modified

gull–winged leads absorb thermal stress during soldering eliminating the

possibility of damage to the die.

• Available in 8 mm embossed tape and reel

Use the Device Number to order the 7 inch/3000 unit reel.

LMUN2211T1

SERIES

NPN SILICON

BIAS RESISTOR

TRANSISTORS

SC–59

CASE 318D, STYLE 1

PIN 2

BASE

(INPUT)

PIN 3

COLLECTOR

(OUTPUT)

PIN 1

EMITTER

(GROUND)

MARKINGDIAGRAM

DEVICE MARKING INFORMATION

*See specific marking information in the device marking table on page 2 of this data sheet.

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Rating

Symbol

Value

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation

= 25°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

Thermal Resistance –

Junction-to-Lead

Junction and Storage

Temperature Range

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

θJA

θJL

, T

stg

CBO

CEO

Symbol

100

8X = Specific Device Code*

M = Date Code

Unit

Vdc

mAdc

Max

230(Note 1)

338(Note 2)

1.8 (Note 1)

2.7 (Note 2)

540(Note 1)

370(Note 2)

264(Note 1)

287(Note 2)

–55 to +150

Unit

°C/W

°C

LMUN2211T1 Series–1/12

LMUN2241T1 Related Products

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Description	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to	conform to
Maker	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC	LRC
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Minimum DC current gain (hFE)	160	80	80	60	8	160	160	160	80
Number of components	1	1	1	1	1	1	1	1	1
Polarity/channel type	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.338 W	0.338 W	0.338 W	0.338 W	0.338 W	0.338 W	0.338 W	0.338 W	0.338 W
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON

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