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M59DR032EB85ZB6E

Description
Flash, 2MX16, 85ns, PBGA48, 7 X 12 MM, 0.75 MM PITCH, TFBGA-48
Categorystorage    storage   
File Size740KB,43 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Download Datasheet Parametric View All

M59DR032EB85ZB6E Overview

Flash, 2MX16, 85ns, PBGA48, 7 X 12 MM, 0.75 MM PITCH, TFBGA-48

M59DR032EB85ZB6E Parametric

Parameter NameAttribute value
MakerNumonyx ( Micron )
Parts packaging codeBGA
package instruction7 X 12 MM, 0.75 MM PITCH, TFBGA-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time85 ns
startup blockBOTTOM
JESD-30 codeR-PBGA-B48
JESD-609 codee1
length12 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.35 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width7 mm
M59DR032EA
M59DR032EB
32 Mbit (2Mb x 16, Dual Bank, Page )
1.8V Supply Flash Memory
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V for Program,
Erase and Read
s
Figure 1. Packages
– V
PP
= 12V for fast Program (optional)
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 Words
– Page Access: 35ns
– Random Access: 85ns, 100ns and 120ns
BGA
s
PROGRAMMING TIME
– 10µs by Word typical
– Double Word Program Option
TFBGA48 (ZB)
7 x 12mm
s
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit, 28 Mbit
– Parameter Blocks (Top or Bottom location)
BGA
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
TFBGA48 (ZF)
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
7 x 7mm
s
COMMON FLASH INTERFACE (CFI)
– 64 bit Unique Device Identifier
– 64 bit User Programmable OTP Cells
s
s
ERASE SUSPEND and RESUME MODES
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M59DR032EA: 00A0h
– Bottom Device Code, M59DR032EB: 00A1h
s
s
April 2003
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