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SLSD-71N1/7

Description
Optoelectronic Device
CategoryLED optoelectronic/LED    photoelectric   
File Size28KB,1 Pages
ManufacturerSilonex Inc.
Websitehttp://www1.silonex.com/
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SLSD-71N1/7 Overview

Optoelectronic Device

SLSD-71N1/7 Parametric

Parameter NameAttribute value
MakerSilonex Inc.
Reach Compliance Codeunknown
SLSD -71N1
SLSD -71N1 / #
Solderable Planar Photodiode
Features
Visible and IR spectral response
High reliability
Oxide passivation
Linear short circuit current
Low capacitance, high speed
Protective coating
Available in arrays where # indicates number of
elements ( maximum of 9 elements )
Description
The Silonex series of silicon solderable planar
photodiodes feature low cost, high reliability, and
linear short circuit current over a wide range of
illumination. These devices are widely used for light
sensing and power generation because of their
stability and high efficiency. They are particularly
suited to power conversion applications due to their
low internal impedance, relatively high shunt
impedance, and stability. The photodiodes have a
protective coating that protects them from humidity
effects. The electrical characteristics below are per
element. In the multielement arrays the cathodes are
common to a single cathode wire.
Absolute Maximum Ratings
Storage Temperature
Operating Temperature
1.0
5.08
2.54
+RED
(Anode)
150 nom.
5.1
-BLK
(Cathode)
Sensitive Area
(10.4 sq. mm.)
#32 AWG Wire
Dimensions in mm.
Also available without leads as part number SLCD-61N1
Directional Sensitivity Characteristics
50°
40°
30°
20°
10°
1.0
.8
60°
.6
.4
.2
0
Half Angle = 60°
70°
80°
90°
-40°C to +105°C
-40°C to +105°C
100°
1.0
o
.8
.6
.4
0
20°
40°
60°
80° 100° 120°
Electrical Characteristics
(T
A
=25°C unless otherwise noted)
Symbol
Parameter
Min
Typ
I
SC
Short Circuit Current
0.4
0.5
V
OC
Open Circuit Voltage
0.40
I
D
Reverse Dark Current
C
J
Junction Capacitance
0.4
Spectral Sensitivity
0.55
S
λ
V
BR
Reverse Breakdown Voltage
20
Maximum Sensitivity Wavelength
930
λ
P
Sensitivity Spectral Range
400
λ
R
Acceptance Half Angle
60
θ
1/2
Notes: (1) Ee = light source @ 2854
°K
Units
Test Conditions
2
mA
V
R
=0V, Ee=25mW/cm (1)
2
V
Ee=25mw/cm (1)
1.7
V
R
=5V, Ee=0
µA
nF
V
R
=0V, Ee=0, f=1MHz
A/W
λ=940nm
V
I
R
=100µA
nm
1100
nm
deg
(off center-line)
Specifications subject to change without notice
101391 REV 8
Max
5200 St. Patrick St., Montreal
Que., H4E 4N9, Canada
Tel: 514-768-8000
Fax: 514-768-8889
QF-84
The Old Railway, Princes Street
Ulverston, Cumbria, LA12 7NQ, UK
Tel: 01 229 581 551
Fax: 01 229 581 554

SLSD-71N1/7 Related Products

SLSD-71N1/7 SLSD-71N1/1
Description Optoelectronic Device Optoelectronic Device
Maker Silonex Inc. Silonex Inc.
Reach Compliance Code unknown unknown

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