Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon,
| Parameter Name | Attribute value |
| Maker | Fairchild |
| package instruction | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 0.8 A |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | R-PDSO-G3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Polarity/channel type | PNP |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| Maximum off time (toff) | 100 ns |
| Maximum opening time (tons) | 45 ns |
| MMBT2907AS62Z | MMBT2907AL99Z | |
|---|---|---|
| Description | Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, | Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, |
| Maker | Fairchild | Fairchild |
| package instruction | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
| Reach Compliance Code | unknown | unknown |
| ECCN code | EAR99 | EAR99 |
| Maximum collector current (IC) | 0.8 A | 0.8 A |
| Collector-emitter maximum voltage | 60 V | 60 V |
| Configuration | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 100 | 100 |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Polarity/channel type | PNP | PNP |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
| Nominal transition frequency (fT) | 200 MHz | 200 MHz |
| Maximum off time (toff) | 100 ns | 100 ns |
| Maximum opening time (tons) | 45 ns | 45 ns |
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