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1.
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
NESG3031M05
NPN SiGe RF TRANSISTOR FOR
LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.6 dB TYP., G
a
= 16.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 2.4 GHz
NF = 0.95 dB TYP., G
a
= 10.0 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.2 GHz
NF = 1.1 dB TYP., G
a
= 9.5 dB TYP. @ V
CE
= 2 V, I
C
= 6 mA, f = 5.8 GHz
• Maximum stable power gain: MSG = 14.0 dB TYP. @ V
CE
= 3 V, I
C
= 20 mA, f = 5.8 GHz
• SiGe HBT technology (UHS3) adopted: f
max
= 110 GHz
• Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG)
<R>
ORDERING INFORMATION
Part Number
NESG3031M05
Order Number
NESG3031M05-A
Package
Flat-lead 4-pin thin-type super
minimold (M05, 2012 PKG)
NESG3031M05-T1 NESG3031M05-T1-A
(Pb-Free)
Quantity
50 pcs
(Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector), Pin 4 (Emitter) face the
perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
Unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
12.0
4.3
1.5
35
150
150
−65
to +150
Unit
V
V
V
mA
mW
°C
°C
T
j
T
stg
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PWB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. PU10414EJ04V0DS (4th edition)
Date Published December 2008 NS
Printed in Japan
The mark <R> shows major revised points.
2003, 2008
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
GD32 MCU
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