28C17A-25I/L datasheet, PDF - EEWORLD Datasheet

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28C17A-25I/L: Description2K X 8 EEPROM 5V, 250 ns, PQCC32, PLASTIC, LCC-32; Categorystorage storage; File Size85KB，8 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com

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28C17A-25I/L Overview

2K X 8 EEPROM 5V, 250 ns, PQCC32, PLASTIC, LCC-32

28C17A-25I/L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	QFJ
package instruction	QCCJ, LDCC32,.5X.6
Contacts	32
Reach Compliance Code	_compli
ECCN code	EAR99
Factory Lead Time	1 week
Maximum access time	250 ns
Other features	AUTOMATIC WRITE; BULK ERASE; 10K ERASE/WRITE CYCLES MIN.; 1MS BYTE WRITE; DATA RETENTION > 10 YEARS
command user interface	NO
Data polling	YES
Data retention time - minimum	10
Durability	10000 Write/Erase Cycles
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	16384 bi
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	2048 words
character code	2000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	2KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Encapsulate equivalent code	LDCC32,.5X.6
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
ready/busy	YES
Maximum seat height	3.56 mm
Maximum standby current	0.0001 A
Maximum slew rate	0.03 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
switch bit	NO
width	11.43 mm
Maximum write cycle time (tWC)	1 ms
Base Number Matches	1

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28C17A

16K (2K x 8) CMOS EEPROM

FEATURES

• Fast Read Access Time—150 ns

• CMOS Technology for Low Power Dissipation

- 30 mA Active

- 100

A Standby

• Fast Byte Write Time—200

s or 1 ms

• Data Retention >200 years

• High Endurance - Minimum 10

Erase/Write Cycles

• Automatic Write Operation

- Internal Control Timer

- Auto-Clear Before Write Operation

- On-Chip Address and Data Latches

• Data Polling; Ready/Busy

• Chip Clear Operation

• Enhanced Data Protection

- V

Detector

- Pulse Filter

- Write Inhibit

• Electronic Signature for Device Identiﬁcation

• 5-Volt-Only Operation

• Organized 2Kx8 JEDEC Standard Pinout

- 28 Pin Dual-In-Line Package

- 32-Pin PLCC Package

• Available for Extended Temperature Ranges:

- Commercial: 0˚C to +70˚C

- Industrial: -40˚C to +85˚C

PACKAGE TYPES

RDY/BSY

I/O0

I/O1

I/O2

•1

Vcc

A10 A2

I/O7

I/O6

I/O0

I/O5

I/O4

I/O3

RDY/BSY

Vcc

A10

I/O7

I/O6

• Pin 1 indicator on PLCC on top of package

BLOCK DIAGRAM

I/O0

I/O7

Rdy/

Busy

Data Protection

Circuitry

Chip Enable/

Output Enable

Control Logic

Auto Erase/Write

Timing

Data

Poll

Program Voltage

Generation

DESCRIPTION

The Microchip Technology Inc. 28C17A is a CMOS 16K non-

volatile electrically Erasable PROM. The 28C17A is

accessed like a static RAM for the read or write cycles without

the need of external components. During a “byte write”, the

address and data are latched internally, freeing the micropro-

cessor address and data bus for other operations. Following

the initiation of write cycle, the device will go to a busy state

and automatically clear and write the latched data using an

internal control timer. To determine when the write cycle is

complete, the user has a choice of monitoring the Ready/

Busy output or using Data polling. The Ready/Busy pin is an

open drain output, which allows easy conﬁguration in wired-

or systems. Alternatively, Data polling allows the user to read

the location last written to when the write operation is com-

plete. CMOS design and processing enables this part to be

used in systems where reduced power consumption and reli-

ability are required. A complete family of packages is offered

to provide the utmost ﬂexibility in applications.

A10

Decoder

1998 Microchip Technology Inc.

I/O1

I/O2

Vss

I/O3

I/O4

I/O5

Input/Output

Buffers

16K bit

Cell Matrix

DS11127I-page 1

DIP/SOIC

PLCC

Y Gating

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