3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
| Parameter Name | Attribute value |
| package instruction | CYLINDRICAL, O-MBCY-W3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Other features | RADIATION HARDENED |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V |
| Maximum drain current (ID) | 3.5 A |
| Maximum drain-source on-resistance | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| Maximum feedback capacitance (Crss) | 25 pF |
| JEDEC-95 code | TO-205AF |
| JESD-30 code | O-MBCY-W3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL |
| Maximum power consumption environment | 15 W |
| Maximum pulsed drain current (IDM) | 14 A |
| Certification status | Not Qualified |
| Guideline | MILITARY STANDARD (USA) |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Maximum off time (toff) | 45 ns |
| Maximum opening time (tons) | 40 ns |
| Base Number Matches | 1 |
| 2N6782TXV | 2N6782 | 2N6782TX | JANTX2N6782 | |
|---|---|---|---|---|
| Description | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF | 3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| Reach Compliance Code | unknow | _compli | unknow | not_compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED |
| Shell connection | DRAIN | DRAIN | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 100 V | 100 V | 100 V | 100 V |
| Maximum drain current (ID) | 3.5 A | 3.5 A | 3.5 A | 3.5 A |
| Maximum drain-source on-resistance | 0.6 Ω | 0.6 Ω | 0.6 Ω | 0.6 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-205AF | TO-205AF | TO-205AF | TO-205AF |
| JESD-30 code | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 | O-MBCY-W3 |
| Number of components | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | METAL | METAL | METAL | METAL |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum pulsed drain current (IDM) | 14 A | 14 A | 14 A | 14 A |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| Maximum feedback capacitance (Crss) | 25 pF | 25 pF | - | 25 pF |
| Maximum operating temperature | 150 °C | 150 °C | - | 150 °C |
| Maximum power consumption environment | 15 W | 15 W | - | 15 W |
| Guideline | MILITARY STANDARD (USA) | - | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) |
| Maximum off time (toff) | 45 ns | 45 ns | - | 45 ns |
| Maximum opening time (tons) | 40 ns | 40 ns | - | 40 ns |
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