2N6782 datasheet, PDF - EEWORLD Datasheet

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2N6782: Description3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF; CategoryDiscrete semiconductor The transistor; File Size146KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2N6782 Overview

3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

2N6782 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	3.5 A
Maximum drain current (ID)	3.5 A
Maximum drain-source on-resistance	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	25 pF
JEDEC-95 code	TO-205AF
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	15 W
Maximum power dissipation(Abs)	15 W
Maximum pulsed drain current (IDM)	14 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	45 ns
Maximum opening time (tons)	40 ns
Base Number Matches	1

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2N6782 Related Products

	2N6782	2N6782TX	2N6782TXV	JANTX2N6782
Description	3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF	3.5A, 100V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Reach Compliance Code	_compli	unknow	unknow	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED	RADIATION HARDENED
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V	100 V
Maximum drain current (ID)	3.5 A	3.5 A	3.5 A	3.5 A
Maximum drain-source on-resistance	0.6 Ω	0.6 Ω	0.6 Ω	0.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-205AF	TO-205AF	TO-205AF	TO-205AF
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	14 A	14 A	14 A	14 A
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Base Number Matches	1	1	1	1
Maximum feedback capacitance (Crss)	25 pF	-	25 pF	25 pF
Maximum operating temperature	150 °C	-	150 °C	150 °C
Maximum power consumption environment	15 W	-	15 W	15 W
Maximum off time (toff)	45 ns	-	45 ns	45 ns
Maximum opening time (tons)	40 ns	-	40 ns	40 ns
Guideline	-	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)	MILITARY STANDARD (USA)

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