NE25139U73 datasheet, PDF - EEWORLD Datasheet

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NE25139U73: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size191KB，6 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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NE25139U73 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN

NE25139U73 Parametric

Parameter Name	Attribute value
Maker	California Eastern Labs
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Manufacturer packaging code	CASE 39
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	13 V
Maximum drain current (ID)	0.04 A
FET technology	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Operating mode	DUAL GATE, DEPLETION MODE
Maximum operating temperature	125 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	16 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

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NE25139U73 Related Products

	NE25139U73	NE25137N	NE25139U72	NE25137M	NE25137	NE25137K	NE25137L	NE25139	NE25139U71	NE25139U74
Description	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 37, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 37, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 37, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 37, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 37, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, CASE 39, 4 PIN
package instruction	SMALL OUTLINE, R-PDSO-G4	CASE 37, 4 PIN	SMALL OUTLINE, R-PDSO-G4	CASE 37, 4 PIN	DISK BUTTON, O-CRDB-F4	CASE 37, 4 PIN	CASE 37, 4 PIN	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Contacts	4	4	4	4	4	4	4	4	4	4
Manufacturer packaging code	CASE 39	CASE 37	CASE 39	CASE 37	CASE 37	CASE 37	CASE 37	CASE 39	CASE 39	CASE 39
Reach Compliance Code	unknown	compliant	unknown	compliant	compliant	compliant	compliant	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum drain current (ID)	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A	0.04 A
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
Maximum feedback capacitance (Crss)	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF	0.03 pF
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G4	O-CRDB-F4	R-PDSO-G4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	O-CRDB-F4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	1	1	1	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4	4	4	4
Operating mode	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE	DUAL GATE, DEPLETION MODE
Package body material	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	ROUND	RECTANGULAR	ROUND	ROUND	ROUND	ROUND	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	DISK BUTTON	SMALL OUTLINE	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB	16 dB
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES	YES
Terminal form	GULL WING	FLAT	GULL WING	FLAT	FLAT	FLAT	FLAT	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	RADIAL	DUAL	RADIAL	RADIAL	RADIAL	RADIAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Base Number Matches	-	1	1	1	1	1	1	1	1	-

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