CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
DSS
TEST CONDITIONS
I
D
= 0.25mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 0.5mA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
C
= 125
o
C
MIN
200
2
-
-
-
-
-
-
0.7
0.9
-
-
-
-
V
DS
= 25V, V
GS
= 0V, f = 1MHz
(Figure 14)
60
20
5
-
Free Air Operation
-
TYP
-
-
-
-
-
-
1.0
-
-
1.3
-
-
-
-
135
60
16
-
-
MAX
-
4
250
1000
3.37
±
100
1.500
2.81
1.5
2.7
15
20
30
20
200
80
25
8.33
175
UNITS
V
V
µ
A
µ
A
V
nA
Ω
Ω
V
S
ns
ns
ns
ns
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
V
DS(ON)
I
GSS
r
DS(ON)
I
D
= 2.25A, V
GS
= 10V
V
GS
=
±
20V
I
D
= 1.5A, V
GS
= 10V, T
A
= 25
o
C
I
D
= 1.5A, V
GS
= 10V, T
A
= 125
o
C
Diode Forward Voltage
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
SD
gfs
t
d(ON)
t
r
t
d(OFF)
t
f
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
I
S
= 2.25A, V
GS
= 0V
V
DS
= 5V, I
D
= 1.5A
V
DD
≅
75V, I
D
= 1.5A, R
G
= 50
Ω
(Figure 17) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Source to Drain Diode Specifications
PARAMETER
Reverse Recovery Time
Reverse Recovered Charge
NOTES:
2. Pulse test: pulse width
≤
300
µ
s, duty cycle
≤
2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal impedance curve (Figure 3).
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