2N3072 datasheet, PDF - EEWORLD Datasheet

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2N3072: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39; CategoryDiscrete semiconductor The transistor; File Size94KB，1 Pages; ManufacturerCDIL[Continental Device India Pvt. Ltd.]

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2N3072 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39

2N3072 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JEDEC-95 code	TO-39
JESD-30 code	O-MBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	200 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.8 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Transistor component materials	SILICON
Nominal transition frequency (fT)	130 MHz
Maximum off time (toff)	100 ns
VCEsat-Max	1 V
Base Number Matches	1

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2N3072 Related Products

	2N3072	2N3073	2N2904A	2N3502	2N4030	2N3635
Description	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39,	Small Signal Bipolar Transistor, 0.6A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-39	Small Signal Bipolar Transistor, 1A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
Is it Rohs certified?	incompatible	incompatible	incompatible	conform to	conform to	conform to
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	compli	compli	compli	compli	compli	compliant
Maximum collector current (IC)	0.5 A	0.5 A	0.6 A	0.6 A	1 A	1 A
Collector-based maximum capacity	10 pF	10 pF	8 pF	8 pF	20 pF	10 pF
Collector-emitter maximum voltage	60 V	60 V	60 V	45 V	60 V	140 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	15	15	40	50	15	50
JEDEC-95 code	TO-39	TO-39	TO-39	TO-39	TO-39	TO-39
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1	1	1	1
Number of terminals	3	3	3	3	3	3
Maximum operating temperature	200 °C	200 °C	175 °C	175 °C	175 °C	175 °C
Package body material	METAL	METAL	METAL	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.8 W	0.36 W	0.6 W	0.7 W	0.8 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	130 MHz	130 MHz	200 MHz	200 MHz	100 MHz	200 MHz
VCEsat-Max	1 V	1 V	1.6 V	1.6 V	1 V	0.5 V
Base Number Matches	1	1	1	1	1	1
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99
Maximum off time (toff)	100 ns	100 ns	100 ns	100 ns	-	600 ns

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