LNTR4003NT1G datasheet, PDF - EEWORLD Datasheet

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LNTR4003NT1G: DescriptionSmall Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,; CategoryDiscrete semiconductor The transistor; File Size243KB，5 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LNTR4003NT1G Overview

Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

LNTR4003NT1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	0.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.83 W
surface mount	YES

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LESHAN RADIO COMPANY, LTD.

Small Signal MOSFET

30 V, 0.56 A, Single, N−Channel, Gate

ESD Protection, SOT-23

LNTR4003NLT1G

•

Features

Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design

Low Gate Charge for Fast Switching

ESD Protected Gate

Minimum Breakdown Voltage Rating of 30 V

We declare that the material of product is ROHS compliant

and halogen free.

Level Shifters

Level Switches

Low Side Load Switches

Portable Applications

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Continuous Drain

Current (Note 1)

Power Dissipation

(Note 1)

Pulsed Drain Current

Steady

State

= 25°C

= 85°C

Symbol

DSS

Value

±20

0.5

0.37

0.69

0.56

0.40

Tstg

0.83

1.7

−55 to

150

1.0

260

°C

Unit

SOT-23

Applications

Drain

MAXIMUM RATINGS

= 25°C unless otherwise noted)

Gate 1

Source

Steady State

t < 10 s

= 25°C

= 85°C

t<5s

= 10

MARKING DIAGRAM

Drain

Source

Shipping

3000/Tape & Reel

10,000/Tape & Reel

Rev .O 1/5

TR8

Operating Junction and Storage Temperature

Source Current (Body Diode)

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Gate

TR8

= Specific Device Code

= Month Code

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

Device

Package

SOT−23

THERMAL RESISTANCE RATINGS

Parameter

Junction−to−Ambient − Steady State (Note 1)

Junction−to−Ambient − t < 10 s (Note 1)

Junction−to−Ambient − Steady State (Note 2)

Symbol

qJA

Max

180

150

300

Unit

°C/W

LNTR4003NT1G

LNTR4003NT3G

1. Surface−mounted on FR4 board using 1 in sq pad size

(Cu area = 1.127 in sq [1 oz] including traces).

2. Surface−mounted on FR4 board using the minimum recommended pad size.

LNTR4003NT1G Related Products

	LNTR4003NT1G	LNTR4003NT3G
Description	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Is it Rohs certified?	conform to	conform to
Maker	LRC	LRC
Reach Compliance Code	unknown	unknown
Configuration	Single	Single
Maximum drain current (Abs) (ID)	0.5 A	0.5 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	0.83 W	0.83 W
surface mount	YES	YES

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