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MRF448

Description
RF Power Bipolar Transistor, 1-Element, Silicon, NPN, CASE 211-11, 4 PIN
CategoryDiscrete semiconductor    The transistor   
File Size136KB,5 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Environmental Compliance
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MRF448 Overview

RF Power Bipolar Transistor, 1-Element, Silicon, NPN, CASE 211-11, 4 PIN

MRF448 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTE Connectivity
Contacts4
Manufacturer packaging codeCASE 211-11
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)16 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)10
JESD-30 codeO-CRFM-F4
Number of components1
Number of terminals4
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF448/D
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high–voltage applications as a high–power linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
Intermodulation Distortion @ 250 W (PEP) —
IMD = –30 dB (Max)
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MRF448
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211–11, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Withstand Current — 10 s
Total Device Dissipation @ T
C
= 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
50
100
4.0
16
20
290
1.67
–65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I
C
= 200 mAdc, I
B
= 0)
Collector–Emitter Breakdown Voltage (I
C
= 100 mAdc, V
BE
= 0)
Collector–Base Breakdown Voltage (I
C
= 100 mAdc, I
E
= 0)
Emitter–Base Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
50
100
100
4.0
Vdc
Vdc
Vdc
Vdc
(continued)
NOTE:
1. P
D
is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
1
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