PRELIMINARY
PRELIMINARY
PRELIMINARY
MPS2907A
SMALL SIGNAL TRANSISTORS (PNP)
TO-92
0.181 (4.6)
min. 0.492 (12.5) 0.181 (4.6)
0.142 (3.6)
FEATURES
♦
PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
♦
On special request, this transistor is also
manufactured in the pin configuration
TO-18.
♦
This transistor is also available in the
SOT-23 case with the type designation
MMBT2907A.
max.
∅
0.022 (0.55)
0.098 (2.5)
E
C
MECHANICAL DATA
Case:
TO-92 Plastic Package
Weight:
approx. 0.18g
B
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
VALUE
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at T
A
= 25°C
Derate above 25°C
Power Dissipation at T
C
= 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction Case
Junction Temperature
Storage Temperature Range
–V
CBO
–V
CEO
–V
EBO
–I
C
P
tot
P
tot
R
ΘJA
R
ΘJC
T
j
T
S
60
60
5.0
600
625
5.0
1.5
12
200
83.3
150
–500 to +150
Volts
Volts
Volts
mA
mW
mW/°C
mW
mW/°C
°C/W
°C/W
°C
°C
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
12/16/98
MPS2907A
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at –I
C
= 10
µA,
I
E
= 0
Collector-Emitter Breakdown Voltage
at –I
C
= 10 mA, I
B
= 0
Emitter-Base Breakdown Voltage
at –I
E
= 10
µA,
I
C
= 0
Collector-Emitter Saturation Voltage
at –I
C
= 150 mA, –I
B
= 15 mA
at –I
C
= 500 mA, –I
B
= 50 mA
Base-Emitter Saturation Voltage
at –I
C
= 150 mA, –I
B
= 15 mA
at –I
C
= 500 mA, –I
B
= 50 mA
Collector Cutoff Current
at –V
EB
= 0.5 V, –V
CE
= 30 V
Collector Cutoff Current
at –V
CB
= 50 V, I
E
= 0
at –V
CB
= 50 V, I
E
= 0, T
A
=150°C
Base Cutoff Current
at –V
EB
= 0.5 V, –V
CE
= 30 V
DC Current Gain
at –V
CE
= 10 V, –I
C
= 0.1 mA
at –V
CE
= 10 V, –I
C
= 1 mA
at –V
CE
= 10 V, –I
C
= 10 mA
at –V
CE
= 10 V, –I
C
= 150 mA
at –V
CE
= 10 V, –I
C
= 500 mA
Gain-Bandwidth Product
at –V
CE
= 20 V, –I
C
= 50 mA, f = 100 MHz
Output Capacitance
at –V
CB
= 10 V, f = 1 MHz, I
E
= 0
Emitter-Base Capacitance
at –V
EB
= 2.0 V, f = 1 MHz, I
E
= 0
–V
(BR)CBO
–V
(BR)CEO
–V
(BR)EBO
60
60
5
–
–
–
Volts
Volts
Volts
–V
CEsat
–V
CEsat
–V
BEsat
–V
BEsat
–I
CEX
–I
CBO
–
–
–
–
–
0.4
1.6
1.3
2.6
50
Volts
Volts
Volts
Volts
nA
µA
–
–I
BL
–
0.01
10
50
nA
h
FE
h
FE
h
FE
h
FE
h
FE
f
T
75
100
100
100
50
200
–
–
–
300
–
–
–
–
–
–
–
MHz
C
obo
C
ibo
–
–
8.0
30
pF
pF
MPS2907A
ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Turn-On Time
at –I
B1
= 15 mA, –I
C
= 150 mA, –V
CC
= 30 V
Delay Time (See Fig. 1)
at –I
B1
= 15 mA, –I
C
= 150 mA, –V
CC
= 30 V
Rise Time (See Fig. 1)
at –I
B1
= 15 mA, –I
C
= 150 mA, –V
CC
= 30 V
Turn-Off Time
at –I
B1
= –I
B2
= 15 mA, –I
C
= 150 mA, –V
CC
= 6 V
Storage Time (See Fig. 2)
at I
B1
= –I
B2
= 15 mA, –I
C
= 150 mA, –V
CC
= 6 V
Fall Time (See Fig. 2)
at I
B1
= –I
B2
= 15 mA, –I
C
= 150 mA, –V
CC
= 6 V
t
on
–
45
ns
t
d
–
35
ns
t
r
–
35
ns
t
off
–
100
ns
t
s
–
225
ns
t
f
–
75
ns
SWITCHING TIME EQUIVALENT TEST CIRCUIT
FIGURE 1 - DELAY AND RISE TIME TEST CIRCUIT
-30V
INPUT
Z
o
= 50
Ω
PRF = 150 PPS
Rise Time
≤
2.0 ns
P.W. < 200 ns
0
-16 V
50
200ns
200ns
200
INPUT
Z
o
= 50
Ω
PRF = 150 PPS
Rise Time
≤
2.0 ns
P.W. < 200 ns
0
-30 V
50
FIGURE 2 - STORAGE AND FALL TIME TEST CIRCUIT
+15 V
1.0 k
1.0 k
To Oscilloscope
Rise Time
≤
5.0 ns
-6.0 V
37
1.0 k
To Oscilloscope
Rise Time
≤
5.0 ns
Embedded System
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