BAS17T/R datasheet, PDF - EEWORLD Datasheet

BAS17T/R: DescriptionDIODE SILICON, STABISTOR DIODE, TO-236AB, PLASTIC PACKAGE-3, Stabistor Diode; CategoryDiscrete semiconductor diode; File Size56KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BAS17T/R Overview

DIODE SILICON, STABISTOR DIODE, TO-236AB, PLASTIC PACKAGE-3, Stabistor Diode

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Diode component materials	SILICON
Diode type	STABISTOR DIODE
Maximum forward voltage (VF)	0.96 V
Minimum forward voltage (VF)	0.87 V
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.25 W
Certification status	Not Qualified
Reverse test voltage	4 V
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40

DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D088

BAS17

Low-voltage stabistor

Product data sheet

Supersedes data of 1999 May 31

2003 Mar 25

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