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DS1730Y-200IND

Description
Non-Volatile SRAM Module, 32KX8, 200ns, CMOS
Categorystorage    storage   
File Size160KB,12 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
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DS1730Y-200IND Overview

Non-Volatile SRAM Module, 32KX8, 200ns, CMOS

DS1730Y-200IND Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMaxim
package instruction0.740 INCH, PLASTIC, MODULE-28
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time200 ns
Other featuresDATA RETENTION = 10 YRS
JESD-30 codeR-PDIP-T28
JESD-609 codee0
length37.85 mm
memory density262144 bit
Memory IC TypeNON-VOLATILE SRAM MODULE
memory width8
Number of functions1
Number of terminals28
word count32768 words
character code32000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize32KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Certification statusNot Qualified
Maximum seat height9.52 mm
Maximum standby current0.004 A
Maximum slew rate0.04 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width15.24 mm

DS1730Y-200IND Related Products

DS1730Y-200IND DS1730YLPM-150-IND DS1730Y-150IND DS1730Y-150-IND
Description Non-Volatile SRAM Module, 32KX8, 200ns, CMOS Non-Volatile SRAM, 32KX8, 150ns, CMOS Non-Volatile SRAM Module, 32KX8, 150ns, CMOS 32KX8 NON-VOLATILE SRAM MODULE, 150ns, PDIP28, 0.740 INCH, PLASTIC, DIP-28
Is it Rohs certified? incompatible incompatible incompatible incompatible
Reach Compliance Code not_compliant not_compliant not_compliant compliant
Maximum access time 200 ns 150 ns 150 ns 150 ns
memory density 262144 bit 262144 bit 262144 bit 262144 bit
Memory IC Type NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM NON-VOLATILE SRAM MODULE NON-VOLATILE SRAM MODULE
memory width 8 8 8 8
Number of terminals 28 34 28 28
word count 32768 words 32768 words 32768 words 32768 words
character code 32000 32000 32000 32000
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C
organize 32KX8 32KX8 32KX8 32KX8
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code DIP28,.6 MODULE,34LEAD,1.0 DIP28,.6 DIP28,.6
Package form IN-LINE MICROELECTRONIC ASSEMBLY IN-LINE IN-LINE
power supply 3/3.3 V 3/3.3 V 3/3.3 V 3/3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum standby current 0.004 A 0.004 A 0.004 A 0.004 A
Maximum slew rate 0.04 mA 0.04 mA 0.04 mA 0.04 mA
technology CMOS CMOS CMOS CMOS
Temperature level INDUSTRIAL INDUSTRIAL INDUSTRIAL INDUSTRIAL
Is it lead-free? Contains lead - Contains lead Contains lead
Maker Maxim - Maxim Maxim
package instruction 0.740 INCH, PLASTIC, MODULE-28 - DIP, DIP28,.6 0.740 INCH, PLASTIC, DIP-28
Other features DATA RETENTION = 10 YRS - DATA RETENTION = 10 YRS OVER 10 YEARS DATA RETENTION
JESD-30 code R-PDIP-T28 - R-PDIP-T28 R-PDIP-P28
JESD-609 code e0 - e0 e0
Number of functions 1 - 1 1
Operating mode ASYNCHRONOUS - ASYNCHRONOUS ASYNCHRONOUS
encapsulated code DIP - DIP DIP
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR
Parallel/Serial PARALLEL - PARALLEL PARALLEL
Maximum supply voltage (Vsup) 3.6 V - 3.6 V 3.6 V
Minimum supply voltage (Vsup) 2.7 V - 2.7 V 2.7 V
Nominal supply voltage (Vsup) 3 V - 3 V 3 V
surface mount NO - NO NO
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE - THROUGH-HOLE PIN/PEG
Terminal pitch 2.54 mm - 2.54 mm 2.54 mm
Terminal location DUAL - DUAL DUAL
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