2N3892 datasheet, PDF - EEWORLD Datasheet

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2N3892: DescriptionSilicon Controlled Rectifier, 175000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-93,; CategoryAnalog mixed-signal IC Trigger device; File Size330KB，4 Pages; ManufacturerSemitronics Corp.; Related ProductsFound20parts with similar functions to 2N3892

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2N3892 Overview

Silicon Controlled Rectifier, 175000mA I(T), 800V V(DRM), 800V V(RRM), 1 Element, TO-93,

2N3892 Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknow
Configuration	SINGLE
Maximum DC gate trigger current	400 mA
Maximum DC gate trigger voltage	4 V
Maximum holding current	200 mA
JEDEC-95 code	TO-93
JESD-30 code	O-MUPM-H3
Maximum leakage current	15 mA
On-state non-repetitive peak current	4500 A
Number of components	1
Number of terminals	3
Maximum on-state current	175000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Package body material	METAL
Package shape	ROUND
Package form	POST/STUD MOUNT
Certification status	Not Qualified
Off-state repetitive peak voltage	800 V
Repeated peak reverse voltage	800 V
surface mount	NO
Terminal form	HIGH CURRENT CABLE
Terminal location	UPPER
Trigger device type	SCR
Base Number Matches	1

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2N3892 Similar Products

Part Number	Manufacturer	Description
2N3892	POWEREX	Phase Control SCR 175 Amoeres Average 1200 Volts
150C100BE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
NTE5584	NTE	235.5 A, 1200 V, SCR, TO-93
ST180S12P0V	Vishay(威世)	Silicon Controlled Rectifier, 314A I(T)RMS, 200000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, HERMETIC SEALED, METAL, TO-93, 3 PIN
175C80BE3	Microsemi	Silicon Controlled Rectifier, 275A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
150C120BE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
150C80BE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
175C120BE3	Microsemi	Silicon Controlled Rectifier, 275A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
175C100BE3	Microsemi	Silicon Controlled Rectifier, 275A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
15112GOAE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
15110GOAE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 1000V V(DRM), 1000V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
15108GOAE3	Microsemi	Silicon Controlled Rectifier, 235A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
2N3894	New Jersey Semiconductor	PHASE CONTROL SCR
2N3891	POWEREX	Phase Control SCR 175 Amoeres Average 1200 Volts
150C80B	Coors Components Inc	Silicon Controlled Rectifier, 235000mA I(T), 800V V(DRM),
175C120B	Microsemi	Silicon Controlled Rectifier, 275A I(T)RMS, 275000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
C180P	POWEREX	Phase Control SCR 150 Amperes Average 1600 Volts
150C100B	Coors Components Inc	Silicon Controlled Rectifier, 235000mA I(T), 1000V V(DRM),
175C80B	Microsemi	Silicon Controlled Rectifier, 275A I(T)RMS, 800V V(DRM), 800V V(RRM), 1 Element, TO-209AB, TO-93, 3 PIN
2N3893	POWEREX	Phase Control SCR 175 Amoeres Average 1200 Volts

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