KTD1003C datasheet, PDF - EEWORLD Datasheet

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KTD1003C: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size75KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTD1003C Overview

Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN

KTD1003C Parametric

Parameter Name	Attribute value
Maker	KEC
Parts packaging code	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz

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SEMICONDUCTOR

TECHNICAL DATA

HIGH CURRENT APPLICATION.

FEATURES

High DC Current Gain

: h

FE

=800 3200. (V

CE

=5.0V, I

C

=300mA).

Wide Area of Safe Operation.

Low Collector Saturation Voltage

: V

CE(sat)

=0.17V (I

C

=500mA, I

B

=5.0mA).

D

K

F

D

KTD1003

EPITAXIAL PLANAR NPN TRANSISTOR

A

H

C

G

J

B

E

MAXIMUM RATING (Ta=25

CHARACTERISTIC

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

)

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

C

P

C

*

T

j

T

stg

RATING

60

50

8

1.0

500

1

150

-55

150

UNIT

V

A

mW

W

1

2

3

DIM

A

B

C

D

E

F

G

H

J

K

MILLIMETERS

4.70 MAX

_

2.50 + 0.20

1.70 MAX

0.45+0.15/-0.10

4.25 MAX

_

1.50 + 0.10

0.40 TYP

1.75 MAX

0.75 MIN

0.5+0.10/-0.05

1. BASE

2. COLLECTOR (HEAT SINK)

3. EMITTER

SOT-89

P

C

* : KTD1003 Mounted on Ceramic Substrate (250mm

2

x0.8t)

Marking

h

FE

Rank

Lot No.

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Collector Output Capacitance

Transition Frequency

Base-Emitter Voltage

Note : h

FE

Classification

A:800 1600,

SYMBOL

I

CBO

I

EBO

h

FE

(1) Note

h

FE

(2)

V

CE(sat)

V

BE(sat)

C

ob

f

T

V

BE

B:1200

TEST CONDITION

V

CB

=60V, I

E

=0

V

EB

=8V, I

C

=0

V

CE

=5.0V, I

C

=300mA

V

CE

=5.0V, I

C

=1.0A

I

C

=500mA, I

B

=5.0mA

I

C

=500mA, I

B

=5.0mA

V

CB

=10V, I

E

=0, f=1.0MHz

V

CE

=10V, I

C

=500mA, f=100MHz

V

CE

=5V, I

C

=100mA

MIN.

-

800

400

-

150

-

TYP.

-

1500

-

0.17

0.80

18

250

630

MAX.

100

3200

-

0.30

1.2

30

-

700

V

pF

MHz

mV

UNIT

nA

2400, C:2000 3200

2001. 3. 22

Revision No : 4

L

Type Name

1/2

KTD1003C Related Products

	KTD1003C	KTD1003B	KTD1003A
Description	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN	Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-89, 3 PIN
Maker	KEC	KEC	KEC
Parts packaging code	SOT-89	SOT-89	SOT-89
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Contacts	3	3	3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A
Collector-emitter maximum voltage	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	2000	1200	800
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN
surface mount	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	250 MHz	250 MHz	250 MHz

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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