If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
LF147
Supply Voltage
Differential Input Voltage
Input Voltage Range
(Note 3)
Output Short Circuit
Duration (Note 4)
Power Dissipation
(Notes 5, 11)
T
j
max
θ
jA
Ceramic DIP (J) Package
Plastic DIP (N) Package
Surface Mount Narrow (M)
Surface Mount Wide (WM)
70˚C/W
75˚C/W
100˚C/W
85˚C/W
(Note 7)
Conditions
Min
V
OS
Input Offset Voltage
R
S
=10 kΩ, T
A
=25˚C
Over Temperature
∆V
OS
/∆T Average TC of Input Offset
Voltage
I
OS
I
B
R
IN
A
VOL
Input Offset Current
Input Bias Current
Input Resistance
Large Signal Voltage Gain
T
j
=25˚C, (Notes 7, 8)
Over Temperature
T
j
=25˚C, (Notes 7, 8)
Over Temperature
T
j
=25˚C
V
S
=
±
15V, T
A
=25˚C
V
O
=
±
10V, R
L
=2 kΩ
Over Temperature
V
O
V
CM
CMRR
PSRR
I
S
Output Voltage Swing
Input Common-Mode Voltage
Range
Common-Mode Rejection Ratio
Supply Voltage Rejection Ratio
Supply Current
R
S
≤10
kΩ
(Note 9)
80
80
V
S
=
±
15V, R
L
=10 kΩ
V
S
=
±
15V
25
25
50
10
12
LF147
Operating Temperature
Range
Storage Temperature
Range
Lead Temperature
(Soldering, 10 sec.)
Soldering Information
Dual-In-Line Package
Soldering (10 seconds)
Small Outline Package
Vapor Phase (60 seconds)
Infrared (15 seconds)
260˚C
(Note 6)
LF347B/LF347
(Note 6)
LF347B/LF347
−65˚C≤T
A
≤150˚C
260˚C
±
22V
±
38V
±
19V
Continuous
900 mW
150˚C
±
18V
±
30V
±
15V
Continuous
1000 mW
150˚C
260˚C
215˚C
220˚C
See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.
ESD Tolerance (Note 12)
900V
DC Electrical Characteristics
Symbol
Parameter
LF147
Typ Max Min
1
10
25
50
100
25
200
50
5
8
LF347B
Typ Max Min
3
10
25
50
10
50
12
LF347
Typ Max
5
10
100
4
200
8
10
25
15
12
Units
10
13
mV
mV
µV/˚C
100
4
200
8
pA
nA
pA
nA
Ω
V/mV
V/mV
V
V
V
dB
dB
11
mA
5
7
R
S
=10 kΩ
25
50
100
100
100
±
12
±
13.5
±
11 +15
−12
100
100
7.2
11
±
12
±
13.5
±
11 +15
−12
80
80
100
100
7.2
11
±
12
±
13.5
±
11 +15
−12
70
70
100
100
7.2
www.national.com
2
LF147/LF347
AC Electrical Characteristics
Symbol
Parameter
Amplifier to Amplifier Coupling
(Note 7)
LF147
Min
Typ Max Min
−120
LF347B
Typ Max Min
−120
LF347
Typ Max
−120
dB
Units
Conditions
T
A
=25˚C,
f=1 Hz−20 kHz
(Input Referred)
SR
GBW
e
n
Slew Rate
Gain-Bandwidth Product
Equivalent Input Noise Voltage
V
S
=
±
15V, T
A
=25˚C
V
S
=
±
15V, T
A
=25˚C
T
A
=25˚C, R
S
=100Ω,
f=1000 Hz
8
2.2
13
4
20
8
2.2
13
4
20
8
2.2
13
4
20
V/µs
MHz
i
n
THD
Equivalent Input Noise Current
Total Harmonic Distortion
T
j
=25˚C, f=1000 Hz
A
V
=+10, R
L
=10k,
V
O
=20 Vp-p,
BW=20 Hz−20 kHz
0.01
0.01
0.01
<
0.02
<
0.02
<
0.02
%
Note 2:
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.
Note 3:
Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
Note 4:
Any of the amplifier outputs can be shorted to ground indefinitely, however, more than one should not be simultaneously shorted as the maximum junction
temperature will be exceeded.
Note 5:
For operating at elevated temperature, these devices must be derated based on a thermal resistance of
θ
jA
.
Note 6:
The LF147 is available in the military temperature range −55˚C≤T
A
≤125˚C,
while the LF347B and the LF347 are available in the commercial temperature
range 0˚C≤T
A
≤70˚C.
Junction temperature can rise to T
j
max = 150˚C.
Note 7:
Unless otherwise specified the specifications apply over the full temperature range and for V
S
=
±
20V for the LF147 and for V
S
=
±
15V for the LF347B/LF347.
V
OS
, I
B
, and I
OS
are measured at V
CM
=0.
Note 8:
The input bias currents are junction leakage currents which approximately double for every 10˚C increase in the junction temperature, T
j
. Due to limited
production test time, the input bias currents measured are correlated to junction temperature. In normal operation the junction temperature rises above the ambient
temperature as a result of internal power dissipation, P
D
. T
j
=T
A
+θ
jA
P
D
where
θ
jA
is the thermal resistance from junction to ambient. Use of a heat sink is
recommended if input bias current is to be kept to a minimum.
Note 9:
Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice from
V
S
=
±
5V to
±
15V for the LF347 and LF347B and from V
S
=
±
20V to
±
5V for the LF147.
Note 10:
Refer to RETS147X for LF147D and LF147J military specifications.
Note 11:
Max. Power Dissipation is defined by the package characteristics. Operating the part near the Max. Power Dissipation may cause the part to operate
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