L14C1 L14C2
HERMETIC SILICON PHOTOTRANSISTOR
PACKAGE DIMENSIONS
0.230 (5.84)
0.209 (5.31)
0.195 (4.96)
0.178 (4.52)
0.030 (0.76)
MAX
0.210 (5.34)
MAX
0.500 (12.7)
MIN
0.100 (2.54)
0.100 (2.54) DIA.
2
1
3
Ø0.021 (0.53) 3X
45°
0.050 (1.27)
SCHEMATIC
(CONNECTED TO CASE)
COLLECTOR
3
0.038 (.97) NOM
0.046 (1.16)
0.036 (0.92)
BASE 2
NOTES:
1. Dimensions for all drawings are in inches (mm).
2. Tolerance of ± .010 (.25) on all non-nominal dimensions
unless otherwise specified.
1
EMITTER
DESCRIPTION
The L14C1/L14C2 are silicon phototransistors mounted in a wide angle, T O-18 package.
FEATURES
• Hermetically sealed package
• Wide reception angle
• RoHS compliant
Light in Motion LLC
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L14C1 L14C2
HERMETIC SILICON PHOTOTRANSISTOR
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron)
(3,4,5 and 6)
Soldering Temperature (Flow)
(3,4 and 6)
Collector to Emitter Breakdown Voltage
Collector to Base Breakdown Voltage
Emitter to Base Breakdwon Voltage
Power Dissipation (T
A
= 25°C)
(1)
Power Dissipation (T
C
= 25°C)
(2)
(T
A
= 25°C unless otherwise specified)
Symbol
T
OPR
T
STG
T
SOL-I
T
SOL-F
V
CEO
V
CBO
V
EBO
P
D
P
D
Rating
-65 to +125
-65 to +150
240 for 5 sec
260 for 10 sec
50
50
7
300
600
Unit
°C
°C
°C
°C
V
V
V
mW
mW
NOTE:
1. Derate power dissipation linearly 3.00 mW/°C above 25°C ambient.
2. Derate power dissipation linearly 6.00 mW/°C above 25°C case.
3. RMA flux is recommended.
4. Methanol or isopropyl alcohols are recommended as cleaning agents.
5. Soldering iron tip
1/16”
(1.6mm) minimum from housing.
6. As long as leads are not under any stress or spring tension.
7. Light source is a GaAs LED emitting light at a peak wavelength of 940 nm.
8. Figure 1 and figure 2 use light source of tungsten lamp at 2870°K color temperature. A GaAs source of 3.0 mW/cm
equivalent to a tungsten source, at 2870°K, of 10 mW/cm
2
.
2
is approximately
ELECTRICAL / OPTICAL CHARACTERISTICS
PARAMETER
(T
A
=25°C) (All measurements made under pulse conditions)
SYMBOL
Collector-Emitter Breakdown
Emitter-Base Breakdown
Collector-Base Breakdown
Collector-Emitter Leakage
Reception Angle at 1/2 Sensitivity
On-State Collector Current L14C1
On-State Collector Current L14C2
On-State Collector Current L14C2
Turn-On Time
Turn-Off Time
Saturation Voltage
I
C
= 10 mA, Ee = 0
I
E
= 100
µA,
Ee = 0
I
C
= 100
µA,
Ee = 0
V
CE
= 20 V, Ee = 0
Ee = 0.5
V
CE
= 5
2
, V = 5 V
(7,8)
Ee = 0.5 mW/cm
CE
Ee = 1.0 mW/cm
2
, V
CE
= 5 V
(7,8)
I
C
= 2 mA, V
CC
= 10 V, R
L
=100
Ω
I
C
= 2 mA, V
CC
= 10 V, R
L
=100
Ω
I
C
= 0.40 mA, Ee = 6.0 mW/cm
2(7,8)
mW/cm
2
,
V
(7,8)
TEST CONDITIONS
BV
CEO
BV
EBO
BV
CBO
I
CEO
θ
I
C(ON)
I
C(ON)
I
C(ON)
t
on
t
off
V
CE(SAT)
MIN
50
7.0
50
—
.16
.08
.16
TYP
MAX
—
—
—
100
—
—
—
±40
5
5
—
0.40
V
V
V
nA
Degrees
mA
mA
mA
µs
µs
V
UNITS
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L14C1 L14C2
HERMETIC SILICON PHOTOTRANSISTOR
Figure 1. Light Current vs. Collector to Emitter Voltage
10
I
I
, NORMALIZED LIGHT CURRENT
I
L
, NORMALIZED LIGHT CURRENT
Ee = 20 mW/cm
2
Ee = 10 mW/cm
2
1.0
Ee = 5 mW/cm
2
Ee = 2 mW/cm
2
0.1
NORMALIZED TO:
V
CE
= 5 V
Ee = 10 mW/cm
2
10
Figure 2. Normalized Light Current vs. Radiation
1.0
NORMALIZED TO:
V
CE
= 5 V
Ee = 10 mW/cm
2
0.1
.01
0.1
1.0
10
100
.01
.01
1.0
10
100
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
E
e
- TOTAL IRRADIANCE IN mW/cm
2
t
on
and t
off
, NORMALIZED TURN ON AND TURN OFF TIMES
Figure 3. Dark Current vs. Temperature
1000
100
I
D
, DARK CURRENT (µA)
10
1.0
0.1
.01
.001
Figure 4. Switching Speed vs. Output Current
10
R
L
= 1KΩ
1.0
NORMALIZED TO:
V
CE
= 10 V
I
C
= 2 mA
t
on
= t
off
= 5
µsec
R
L
= 100
Ω
.01
1
1.0
I
C
, OUTPUT CURRENT (mA)
10
V
CE
= 20 V
Ee = 0 mW/cm
2
R
L
= 100Ω
R
L
= 10Ω
0
25
50
75
100
125
150
100
T, TEMPERATURE (°C)
Figure 5. Spectral Response
1.0
0.9
0.8
RELATIVE RESPONSE
RELATIVE OUTPUT (%)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
500
600
700
800
900
1000
1100
130
120
110
100
90
80
70
60
50
40
30
20
10
-60
Figure 6. Angular Response Curve
-40
-20
0
20
40
60
λ,
WAVE LENGTH (NANOMETERS)
θ,
ANGULAR DISPLACEMENT FROM OPTICAL AXIS (DEGREES)
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L14C1 L14C2
HERMETIC SILICON PHOTOTRANSISTOR
DISCLAIMER
LIGHT IN MOTION LLC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. LIGHT IN MOTION DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT
DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE
RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
LIGHT IN MOTION’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROV AL OF THE PRESIDENT OF
LIGHT IN MOTION LLC. As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to af fect its safety or
effectiveness.
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