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DBB10B

Description
Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size40KB,2 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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DBB10B Overview

Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon,

DBB10B Parametric

Parameter NameAttribute value
MakerSANYO
package instructionR-PDIP-T4
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDIP-T4
Maximum non-repetitive peak forward current30 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationDUAL
Ordering number:EN1061D
DBB10
Diffused Junction Silicon Diode
1.0A Single-Phase Bridge Rectifier
Features
· Plastic molded structure.
· Peak reverse voltage:V
RM
=100 to 600V.
· Average rectified current:I
O
=1.0A.
Package Dimensions
unit:mm
1112
[DBB10]
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Peak Reverse Voltage
Average Recitified Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1cycle
Conditions
DBB10B
100
DBB10E
400
DBB10G
600
1.0
30
150
Unit
V
A
A
˚C
˚C
–40 to +150
Electrical Characteristics
at Ta = 25˚C, per constituent element of bridge
Parameter
Forward Voltage
Reverse Current
Symbol
VF
IR
IF=0.5A
VRM:At each VRM
Conditions
Ratings
min
typ
max
1.0
10
Unit
V
µA
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2

DBB10B Related Products

DBB10B DBB10G DBB10E
Description Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon, Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon,
Maker SANYO SANYO SANYO
package instruction R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-30 code R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
Maximum non-repetitive peak forward current 30 A 30 A 30 A
Number of components 4 4 4
Phase 1 1 1
Number of terminals 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Certification status Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 100 V 600 V 400 V
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location DUAL DUAL DUAL

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