DBB10E datasheet, PDF - EEWORLD Datasheet

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DBB10E: DescriptionBridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size40KB，2 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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DBB10E Overview

Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon,

DBB10E Parametric

Parameter Name	Attribute value
Maker	SANYO
package instruction	R-PDIP-T4
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDIP-T4
Maximum non-repetitive peak forward current	30 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	DUAL

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Ordering number:EN1061D

DBB10

Diffused Junction Silicon Diode

1.0A Single-Phase Bridge Rectifier

Features

· Plastic molded structure.

· Peak reverse voltage:V

RM

=100 to 600V.

· Average rectified current:I

O

=1.0A.

Package Dimensions

unit:mm

1112

[DBB10]

Specifications

Absolute Maximum Ratings

at Ta = 25˚C

Parameter

Peak Reverse Voltage

Average Recitified Current

Surge Forward Current

Junction Temperature

Storage Temperature

Symbol

VRM

IO

IFSM

Tj

Tstg

50Hz sine wave, 1cycle

Conditions

DBB10B

100

→

DBB10E

400

→

DBB10G

600

1.0

30

150

Unit

V

A

˚C

→

–40 to +150

Electrical Characteristics

at Ta = 25˚C, per constituent element of bridge

Parameter

Forward Voltage

Reverse Current

Symbol

VF

IR

IF=0.5A

VRM:At each VRM

Conditions

Ratings

min

typ

max

1.0

10

Unit

V

µA

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE, Tokyo Bldg., 1-10 , Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/62096GI (KOTO)/6038TA/5202KI, TS No.1061-1/2

DBB10E Related Products

	DBB10E	DBB10B	DBB10G
Description	Bridge Rectifier Diode, 1 Phase, 1A, 400V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 1A, 100V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 1A, 600V V(RRM), Silicon,
Maker	SANYO	SANYO	SANYO
package instruction	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V
JESD-30 code	R-PDIP-T4	R-PDIP-T4	R-PDIP-T4
Maximum non-repetitive peak forward current	30 A	30 A	30 A
Number of components	4	4	4
Phase	1	1	1
Number of terminals	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C
Maximum output current	1 A	1 A	1 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE
Certification status	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	400 V	100 V	600 V
surface mount	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	DUAL	DUAL	DUAL

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